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GaSe5Cl3

Alexandria ALEX

Alex-ID: agm072464483 · 空间群: P1 (#1)

基础信息

化学式
GaSe5Cl3
Alex-ID
agm072464483
元素数
3
位点数
9
空间群
P1 (#1)
晶系
triclinic
体积
344.74
ų
晶胞参数 a
7.4547
Å
晶胞参数 b
7.8906
Å
晶胞参数 c
7.7186
Å
α 角
92.98
°
β 角
123.18
°
γ 角
108.71
°

组成

元素组成(原子分数)
组成信息
化学式
GaSe5Cl3
Ga
1.00 · 11.1%
Se
5.00 · 55.6%
Cl
3.00 · 33.3%

能量与稳定性

凸包上方能量
0.0198
eV/atom
形成能
-0.6687
eV/atom
校正后总能量
-30.2621
eV
原始总能量
-30.2621
eV

电子结构

间接带隙
1.7533
eV
直接带隙
1.8147
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

AB3C5_1266_spg1

分解产物

GaCl3 Se

计算时间

2024-09-24 00:31:12.259824

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm072464483).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm072464483
data_agm072464483
_cell_length_a     7.45468
_cell_length_b     7.89055
_cell_length_c     7.71863
_cell_angle_alpha  92.98150
_cell_angle_beta   123.18144
_cell_angle_gamma  108.71488
_cell_volume       344.74197
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.95666 0.94902 0.99552 1.00000
  Se1 Se 0.12165 0.46825 0.51661 1.00000
  Se2 Se 0.58605 0.51634 0.09636 1.00000
  Se3 Se 0.92269 0.82562 0.28039 1.00000
  Se4 Se 0.24139 0.72645 0.41133 1.00000
  Se5 Se 0.25390 0.57027 0.88073 1.00000
  Cl1 Cl 0.33912 0.07293 0.16445 1.00000
  Cl2 Cl 0.77354 0.72014 0.70574 1.00000
  Cl3 Cl 0.80500 0.15098 0.94886 1.00000
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