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Si4H15

Alexandria ALEX

Alex-ID: agm073025901 · 空间群: Cc (#9)

基础信息

化学式
Si4H15
Alex-ID
agm073025901
元素数
2
位点数
38
空间群
Cc (#9)
晶系
monoclinic
体积
440.10
ų
晶胞参数 a
7.7182
Å
晶胞参数 b
7.7182
Å
晶胞参数 c
8.7825
Å
α 角
70.92
°
β 角
109.08
°
γ 角
78.86
°

组成

元素组成(原子分数)
组成信息
化学式
Si4H15
Si
8.00 · 21.1%
H
30.00 · 78.9%

能量与稳定性

凸包上方能量
0.1016
eV/atom
形成能
0.0073
eV/atom
校正后总能量
-140.3007
eV
原始总能量
-140.3007
eV

电子结构

间接带隙
0.4368
eV
直接带隙
0.4632
eV
费米能级态密度
1.3084
总磁矩
0.0000
μB

其他信息

原型 ID

A4B15_20_spg9

分解产物

SiH4 Si

计算时间

2024-10-20 19:43:18

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm073025901).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm073025901
data_agm073025901
_cell_length_a     7.71820
_cell_length_b     7.71820
_cell_length_c     8.78251
_cell_angle_alpha  70.91988
_cell_angle_beta   109.08012
_cell_angle_gamma  78.85716
_cell_volume       440.10418
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.35334 0.28463 0.60269 1.00000
  Si2 Si 0.98594 0.98795 0.33954 1.00000
  Si3 Si 0.69061 0.52573 0.48312 1.00000
  Si4 Si 0.71537 0.64666 0.10269 1.00000
  Si5 Si 0.47427 0.30939 0.98312 1.00000
  Si6 Si 0.01205 0.01406 0.83954 1.00000
  Si7 Si 0.82404 0.60063 0.89510 1.00000
  Si8 Si 0.39937 0.17596 0.39510 1.00000
  H1 H 0.27197 0.15248 0.70502 1.00000
  H2 H 0.11128 0.13131 0.91880 1.00000
  H3 H 0.22405 0.25748 0.22186 1.00000
  H4 H 0.55912 0.23489 0.35514 1.00000
  H5 H 0.26338 0.42463 0.90802 1.00000
  H6 H 0.89888 0.93861 0.93924 1.00000
  H7 H 0.86397 0.12384 0.14903 1.00000
  H8 H 0.89197 0.49258 0.60817 1.00000
  H9 H 0.46000 0.95991 0.47138 1.00000
  H10 H 0.50742 0.10803 0.10817 1.00000
  H11 H 0.04009 0.54000 0.97138 1.00000
  H12 H 0.57537 0.73662 0.40802 1.00000
  H13 H 0.86869 0.88872 0.41880 1.00000
  H14 H 0.20625 0.48507 0.51438 1.00000
  H15 H 0.30432 0.63074 0.16751 1.00000
  H16 H 0.51493 0.79375 0.01438 1.00000
  H17 H 0.87616 0.13603 0.64903 1.00000
  H18 H 0.76511 0.44088 0.85514 1.00000
  H19 H 0.58543 0.40299 0.57080 1.00000
  H20 H 0.70224 0.48776 0.32007 1.00000
  H21 H 0.15220 0.84230 0.34995 1.00000
  H22 H 0.06139 0.10112 0.43924 1.00000
  H23 H 0.15770 0.84780 0.84995 1.00000
  H24 H 0.59701 0.41457 0.07080 1.00000
  H25 H 0.25996 0.64082 0.23007 1.00000
  H26 H 0.35918 0.74004 0.73007 1.00000
  H27 H 0.74252 0.77595 0.72186 1.00000
  H28 H 0.36926 0.69568 0.66751 1.00000
  H29 H 0.84752 0.72803 0.20502 1.00000
  H30 H 0.51224 0.29776 0.82007 1.00000
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