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GdYSi2

Alexandria ALEX

Alex-ID: agm079115606 · 空间群: Pmc2_1 (#26)

基础信息

化学式
GdYSi2
Alex-ID
agm079115606
元素数
3
位点数
8
空间群
Pmc2_1 (#26)
晶系
orthorhombic
体积
176.09
ų
晶胞参数 a
3.8587
Å
晶胞参数 b
5.7339
Å
晶胞参数 c
7.9590
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
GdYSi2
Gd
2.00 · 25.0%
Y
2.00 · 25.0%
Si
4.00 · 50.0%

能量与稳定性

凸包上方能量
0.0065
eV/atom
形成能
-0.8245
eV/atom
校正后总能量
-69.3763
eV
原始总能量
-69.3763
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0011
eV
费米能级态密度
5.6837
总磁矩
14.4035
μB

其他信息

原型 ID

ABC2_538_spg26

分解产物

YSi GdSi

计算时间

2025-01-10 04:28:44

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm079115606).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm079115606
data_agm079115606
_cell_length_a     3.85870
_cell_length_b     5.73389
_cell_length_c     7.95895
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       176.09491
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Gd1 Gd 0.00000 0.86489 0.70050 1.00000
  Gd2 Gd 0.00000 0.13511 0.20050 1.00000
  Y1 Y 0.50000 0.63467 0.34129 1.00000
  Y2 Y 0.50000 0.36533 0.84129 1.00000
  Si1 Si 0.50000 0.87661 0.98405 1.00000
  Si2 Si 0.50000 0.12339 0.48405 1.00000
  Si3 Si 0.00000 0.62215 0.05800 1.00000
  Si4 Si 0.00000 0.37785 0.55800 1.00000
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