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InGa3F12

Alexandria ALEX

Alex-ID: agm079290718 · 空间群: R-3m (#166)

基础信息

化学式
InGa3F12
Alex-ID
agm079290718
元素数
3
位点数
16
空间群
R-3m (#166)
晶系
trigonal
体积
284.74
ų
晶胞参数 a
7.4850
Å
晶胞参数 b
7.4850
Å
晶胞参数 c
7.4850
Å
α 角
58.27
°
β 角
58.27
°
γ 角
58.27
°

组成

元素组成(原子分数)
组成信息
化学式
InGa3F12
In
1.00 · 6.3%
Ga
3.00 · 18.8%
F
12.00 · 75.0%

能量与稳定性

凸包上方能量
0.0018
eV/atom
形成能
-2.9239
eV/atom
校正后总能量
-75.6864
eV
原始总能量
-75.6864
eV

电子结构

间接带隙
4.7308
eV
直接带隙
4.7778
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

AB3C12_395_spg166

分解产物

InGaF6 GaF3

计算时间

2025-02-04 13:02:35

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm079290718).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm079290718
data_agm079290718
_cell_length_a     7.48496
_cell_length_b     7.48496
_cell_length_c     7.48496
_cell_angle_alpha  58.26605
_cell_angle_beta   58.26605
_cell_angle_gamma  58.26605
_cell_volume       284.74307
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.00000 0.00000 0.00000 1.00000
  Ga1 Ga 0.00000 0.50000 0.00000 1.00000
  Ga2 Ga 0.50000 0.00000 0.00000 1.00000
  Ga3 Ga 0.00000 0.00000 0.50000 1.00000
  F1 F 0.69161 0.69161 0.06832 1.00000
  F2 F 0.30839 0.30839 0.93168 1.00000
  F3 F 0.66238 0.07011 0.07011 1.00000
  F4 F 0.33762 0.92989 0.92989 1.00000
  F5 F 0.69161 0.06832 0.69161 1.00000
  F6 F 0.30839 0.93168 0.30839 1.00000
  F7 F 0.07011 0.07011 0.66238 1.00000
  F8 F 0.92989 0.92989 0.33762 1.00000
  F9 F 0.06832 0.69161 0.69161 1.00000
  F10 F 0.93168 0.30839 0.30839 1.00000
  F11 F 0.07011 0.66238 0.07011 1.00000
  F12 F 0.92989 0.33762 0.92989 1.00000
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