Ga2Hg(TeI)2
Alexandria ALEXAlex-ID: agm090454790 · 空间群: P1 (#1)
基础信息
组成
能量与稳定性
电子结构
其他信息
AB2C2D2_16_spg166
GaTeI Hg
2025-06-22 16:38:10
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm090454790).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
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# CIF generated by HEAS from Alexandria entry agm090454790
data_agm090454790
_cell_length_a 4.19052
_cell_length_b 6.29322
_cell_length_c 11.50391
_cell_angle_alpha 105.29091
_cell_angle_beta 80.72251
_cell_angle_gamma 89.83197
_cell_volume 288.48225
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ga1 Ga 0.69705 0.52393 0.62290 1.00000
Ga2 Ga 0.30696 0.47417 0.37559 1.00000
Hg1 Hg 0.98853 0.00486 0.00429 1.00000
Te1 Te 0.79614 0.21872 0.40239 1.00000
Te2 Te 0.20794 0.77927 0.59601 1.00000
I1 I 0.38779 0.61624 0.18730 1.00000
I2 I 0.61559 0.38283 0.81152 1.00000
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