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Ga2Ni2H7

Alexandria ALEX

Alex-ID: agm098340609 · Space group: P1 (#1)

Basic Information

Formula
Ga2Ni2H7
Alex-ID
agm098340609
Elements
3
Sites
22
Space group
P1 (#1)
Crystal system
triclinic
Volume
188.11
ų
Cell a
3.1106
Å
Cell b
5.9157
Å
Cell c
10.5725
Å
α angle
76.35
°
β angle
94.06
°
γ angle
94.89
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga2Ni2H7
Ga
4.00 · 18.2%
Ni
4.00 · 18.2%
H
14.00 · 63.6%

Energy & Stability

Energy above hull
0.2024
eV/atom
Formation energy
0.0530
eV/atom
Corrected total energy
-79.4436
eV
Raw total energy
-79.4436
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.1925
eV
DOS at Fermi level
3.9024
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B2C7_1869_spg1

Decomposition

H2 Ga3Ni2 GaNi3H

Computed at

2025-04-29 18:55:06

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm098340609).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm098340609
data_agm098340609
_cell_length_a     3.11059
_cell_length_b     5.91567
_cell_length_c     10.57255
_cell_angle_alpha  76.35186
_cell_angle_beta   94.06182
_cell_angle_gamma  94.88991
_cell_volume       188.10795
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.41272 0.14416 0.63741 1.00000
  Ga2 Ga 0.61207 0.06804 0.31021 1.00000
  Ga3 Ga 0.82522 0.38873 0.84195 1.00000
  Ga4 Ga 0.05192 0.51654 0.15472 1.00000
  Ni1 Ni 0.58069 0.97744 0.86624 1.00000
  Ni2 Ni 0.58006 0.85679 0.12121 1.00000
  Ni3 Ni 0.32524 0.67539 0.70457 1.00000
  Ni4 Ni 0.59602 0.46010 0.33188 1.00000
  H1 H 0.44882 0.70955 0.85157 1.00000
  H2 H 0.08808 0.87930 0.13985 1.00000
  H3 H 0.81697 0.69779 0.65822 1.00000
  H4 H 0.92277 0.58735 0.42520 1.00000
  H5 H 0.62435 0.10853 0.14079 1.00000
  H6 H 0.08987 0.04029 0.84245 1.00000
  H7 H 0.67289 0.62571 0.43799 1.00000
  H8 H 0.24975 0.44986 0.63971 1.00000
  H9 H 0.59992 0.07729 0.99491 1.00000
  H10 H 0.54431 0.75216 0.99291 1.00000
  H11 H 0.27652 0.86770 0.57526 1.00000
  H12 H 0.59038 0.24058 0.45030 1.00000
  H13 H 0.10448 0.95317 0.36947 1.00000
  H14 H 0.98695 0.42352 0.01318 1.00000
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