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HoPu2Si3

Alexandria ALEX

Alex-ID: agm017179668 · Space group: P2_1/c (#14)

Basic Information

Formula
HoPu2Si3
Alex-ID
agm017179668
Elements
3
Sites
24
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
519.98
ų
Cell a
11.4617
Å
Cell b
5.7003
Å
Cell c
8.5320
Å
α angle
68.87
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
HoPu2Si3
Ho
4.00 · 16.7%
Pu
8.00 · 33.3%
Si
12.00 · 50.0%

Energy & Stability

Energy above hull
0.0142
eV/atom
Formation energy
-0.5507
eV/atom
Corrected total energy
-211.2625
eV
Raw total energy
-211.2625
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0051
eV
DOS at Fermi level
64.5244
Total magnetisation
47.7145
μB

Additional Information

Prototype ID

AB2C3_4717_spg14

Decomposition

PuSi HoSi

Computed at

2024-11-01 08:19:54.768775

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm017179668).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm017179668
data_agm017179668
_cell_length_a     11.46173
_cell_length_b     5.70026
_cell_length_c     8.53202
_cell_angle_alpha  68.87487
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       519.97519
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.08459 0.71582 0.57045 1.00000
  Ho2 Ho 0.41541 0.71582 0.07045 1.00000
  Ho3 Ho 0.58459 0.28418 0.92955 1.00000
  Ho4 Ho 0.91541 0.28418 0.42955 1.00000
  Pu1 Pu 0.74816 0.70855 0.57074 1.00000
  Pu2 Pu 0.75184 0.70855 0.07074 1.00000
  Pu3 Pu 0.41676 0.71188 0.56789 1.00000
  Pu4 Pu 0.08324 0.71188 0.06789 1.00000
  Pu5 Pu 0.91676 0.28812 0.93211 1.00000
  Pu6 Pu 0.58324 0.28812 0.43211 1.00000
  Pu7 Pu 0.24816 0.29145 0.92926 1.00000
  Pu8 Pu 0.25184 0.29145 0.42926 1.00000
  Si1 Si 0.58313 0.85143 0.78856 1.00000
  Si2 Si 0.91687 0.85143 0.28856 1.00000
  Si3 Si 0.91713 0.86103 0.78108 1.00000
  Si4 Si 0.58287 0.86103 0.28108 1.00000
  Si5 Si 0.25027 0.85932 0.78402 1.00000
  Si6 Si 0.24973 0.85932 0.28402 1.00000
  Si7 Si 0.75027 0.14068 0.71598 1.00000
  Si8 Si 0.74973 0.14068 0.21598 1.00000
  Si9 Si 0.41713 0.13897 0.71892 1.00000
  Si10 Si 0.08287 0.13897 0.21892 1.00000
  Si11 Si 0.08313 0.14857 0.71144 1.00000
  Si12 Si 0.41687 0.14857 0.21144 1.00000
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