BaGaSiH
弹性数据 ELAMP-ID: mp-1008506 · 空间群: P3m1 (#156)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 16.78 | 5.2847 | 3.2 | (0,0,0,1) |
| 24.03 | 3.7041 | 28.1 | (1,0,-1,0) |
| 29.45 | 3.0332 | 100.0 | (1,0,-1,1) |
| 29.45 | 3.0332 | 50.0 | (1,-1,0,1) |
| 33.93 | 2.6424 | 24.2 | (0,0,0,2) |
| 42.00 | 2.1511 | 17.7 | (1,0,-1,2) |
| 42.26 | 2.1386 | 44.2 | (2,-1,-1,0) |
| 45.77 | 1.9824 | 1.1 | (2,-1,-1,1) |
| 49.20 | 1.8521 | 4.1 | (2,0,-2,0) |
| 52.34 | 1.7478 | 29.4 | (2,0,-2,1) |
| 55.26 | 1.6623 | 11.7 | (1,1,-2,2) |
| 55.26 | 1.6623 | 23.4 | (2,-1,-1,2) |
| 57.97 | 1.5908 | 20.7 | (1,0,-1,3) |
| 61.10 | 1.5166 | 5.8 | (2,0,-2,2) |
| 66.82 | 1.4000 | 3.4 | (3,-1,-2,0) |
| 69.08 | 1.3597 | 1.2 | (2,-1,-1,3) |
| 69.45 | 1.3533 | 25.2 | (3,-1,-2,1) |
| 71.40 | 1.3212 | 1.9 | (0,0,0,4) |
| 74.31 | 1.2764 | 10.0 | (2,0,-2,3) |
| 76.56 | 1.2444 | 5.0 | (1,0,-1,4) |
| 77.10 | 1.2371 | 6.0 | (3,-1,-2,2) |
| 77.27 | 1.2347 | 4.9 | (3,0,-3,0) |
| 77.27 | 1.2347 | 2.5 | (3,-3,0,0) |
| 86.61 | 1.1240 | 7.1 | (2,-1,-1,4) |
能量属性
电子属性
磁性属性
弹性属性
特征分析
关联任务
引用参考
The crystal structure and related material properties of BaGaSiH were obtained from the Materials Project database (MP-ID: mp-1008506, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_BaGaSiH
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.27714781
_cell_length_b 4.27714781
_cell_length_c 5.28469880
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999640
_symmetry_Int_Tables_number 1
_chemical_formula_structural BaGaSiH
_chemical_formula_sum 'Ba1 Ga1 Si1 H1'
_cell_volume 83.72581902
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba Ba0 1 0.00000000 -0.00000000 0.00094534 1.0
Ga Ga1 1 0.66666700 0.33333300 0.54272342 1.0
Si Si2 1 0.33333300 0.66666700 0.45864049 1.0
H H3 1 0.66666700 0.33333300 0.87139075 1.0
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