Si
传统材料 TRAMP-ID: mp-1120747 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 20.16 | 4.4057 | 20.7 | (1,0,-1,0) |
| 29.18 | 3.0602 | 43.5 | (1,0,-1,1) |
| 35.29 | 2.5436 | 5.6 | (1,1,-2,0) |
| 35.29 | 2.5436 | 11.3 | (2,-1,-1,0) |
| 40.97 | 2.2028 | 24.3 | (2,0,-2,0) |
| 42.50 | 2.1269 | 29.1 | (0,0,0,2) |
| 46.42 | 1.9561 | 100.0 | (2,0,-2,1) |
| 47.47 | 1.9154 | 3.6 | (1,0,-1,2) |
| 55.16 | 1.6652 | 1.0 | (3,-1,-2,0) |
| 55.16 | 1.6652 | 1.0 | (3,-2,-1,0) |
| 56.39 | 1.6317 | 8.2 | (2,-1,-1,2) |
| 59.63 | 1.5506 | 7.1 | (3,-1,-2,1) |
| 59.63 | 1.5506 | 3.5 | (3,-2,-1,1) |
| 60.51 | 1.5301 | 14.9 | (2,0,-2,2) |
| 63.33 | 1.4686 | 1.9 | (3,0,-3,0) |
| 69.66 | 1.3498 | 3.3 | (1,0,-1,3) |
| 72.03 | 1.3112 | 1.6 | (3,-1,-2,2) |
| 74.63 | 1.2718 | 16.4 | (4,-2,-2,0) |
| 79.27 | 1.2085 | 2.1 | (3,0,-3,2) |
| 79.27 | 1.2085 | 1.0 | (3,-3,0,2) |
| 80.57 | 1.1923 | 13.5 | (2,0,-2,3) |
| 80.57 | 1.1923 | 6.7 | (2,-2,0,3) |
| 82.06 | 1.1744 | 3.6 | (4,-1,-3,1) |
| 88.84 | 1.1014 | 1.8 | (4,0,-4,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Si were obtained from the Materials Project database (MP-ID: mp-1120747, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Si
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.08721147
_cell_length_b 5.08721132
_cell_length_c 4.25383911
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999475
_symmetry_Int_Tables_number 1
_chemical_formula_structural Si
_chemical_formula_sum Si6
_cell_volume 95.33915194
_cell_formula_units_Z 6
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Si Si0 1 0.66736260 0.83368030 0.25000000 1.0
Si Si1 1 0.83368030 0.16631970 0.75000000 1.0
Si Si2 1 0.16631970 0.33263740 0.25000000 1.0
Si Si3 1 0.83368030 0.66736260 0.75000000 1.0
Si Si4 1 0.33263740 0.16631970 0.75000000 1.0
Si Si5 1 0.16631970 0.83368030 0.25000000 1.0
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