In3Si
传统材料 TRAMP-ID: mp-1184934 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 15.69 | 5.6483 | 3.5 | (1,0,-1,0) |
| 23.03 | 3.8613 | 20.0 | (1,0,-1,1) |
| 27.35 | 3.2610 | 7.3 | (2,-1,-1,0) |
| 31.68 | 2.8241 | 23.7 | (2,0,-2,0) |
| 33.89 | 2.6453 | 26.5 | (0,0,0,2) |
| 36.05 | 2.4914 | 100.0 | (2,0,-2,1) |
| 42.34 | 2.1348 | 1.8 | (3,-1,-2,0) |
| 44.08 | 2.0544 | 4.0 | (2,-1,-1,2) |
| 45.83 | 1.9798 | 3.7 | (3,-1,-2,1) |
| 47.07 | 1.9306 | 5.1 | (2,-2,0,2) |
| 47.07 | 1.9306 | 10.2 | (2,0,-2,2) |
| 48.34 | 1.8828 | 1.1 | (3,0,-3,0) |
| 54.51 | 1.6834 | 1.9 | (1,0,-1,3) |
| 55.30 | 1.6613 | 2.4 | (3,-1,-2,2) |
| 56.43 | 1.6305 | 17.3 | (4,-2,-2,0) |
| 60.34 | 1.5339 | 1.6 | (3,0,-3,2) |
| 61.76 | 1.5021 | 1.6 | (4,-1,-3,1) |
| 62.04 | 1.4959 | 19.6 | (2,0,-2,3) |
| 66.18 | 1.4121 | 1.7 | (4,0,-4,0) |
| 67.48 | 1.3880 | 13.3 | (4,-2,-2,2) |
| 67.48 | 1.3880 | 6.6 | (2,2,-4,2) |
| 68.81 | 1.3643 | 4.7 | (4,-4,0,1) |
| 68.81 | 1.3643 | 9.3 | (4,0,-4,1) |
| 69.08 | 1.3596 | 1.0 | (3,-1,-2,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of In3Si were obtained from the Materials Project database (MP-ID: mp-1184934, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_In3Si
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 6.52205671
_cell_length_b 6.52205671
_cell_length_c 5.29063100
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000720
_symmetry_Int_Tables_number 1
_chemical_formula_structural In3Si
_chemical_formula_sum 'In6 Si2'
_cell_volume 194.89792433
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
In In0 1 0.17128400 0.34256800 0.25000000 1.0
In In1 1 0.65743200 0.82871600 0.25000000 1.0
In In2 1 0.17128400 0.82871600 0.25000000 1.0
In In3 1 0.82871600 0.65743200 0.75000000 1.0
In In4 1 0.34256800 0.17128400 0.75000000 1.0
In In5 1 0.82871600 0.17128400 0.75000000 1.0
Si Si6 1 0.33333300 0.66666700 0.75000000 1.0
Si Si7 1 0.66666700 0.33333300 0.25000000 1.0
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