Sc2Si3
传统材料 TRAMP-ID: mp-1219398 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 13.83 | 6.4046 | 18.9 | (0,0,0,1) |
| 25.19 | 3.5355 | 24.3 | (0,1,-1,0) |
| 25.21 | 3.5325 | 24.3 | (1,-1,0,0) |
| 25.24 | 3.5291 | 24.1 | (1,0,-1,0) |
| 28.84 | 3.0952 | 13.6 | (0,1,-1,1) |
| 28.86 | 3.0932 | 13.7 | (1,-1,0,1) |
| 28.89 | 3.0909 | 13.7 | (1,0,-1,1) |
| 37.91 | 2.3734 | 100.0 | (0,1,-1,2) |
| 37.92 | 2.3725 | 99.9 | (1,-1,0,2) |
| 37.94 | 2.3715 | 99.8 | (1,0,-1,2) |
| 42.34 | 2.1349 | 5.4 | (0,0,0,3) |
| 44.38 | 2.0413 | 53.4 | (1,-2,1,0) |
| 44.42 | 2.0393 | 53.2 | (1,1,-2,0) |
| 44.46 | 2.0376 | 53.1 | (2,-1,-1,0) |
| 46.70 | 1.9449 | 1.3 | (1,-2,1,1) |
| 46.75 | 1.9432 | 1.3 | (1,1,-2,1) |
| 46.79 | 1.9417 | 1.3 | (2,-1,-1,1) |
| 49.90 | 1.8275 | 1.7 | (0,1,-1,3) |
| 49.91 | 1.8271 | 1.7 | (1,-1,0,3) |
| 49.93 | 1.8266 | 1.7 | (1,0,-1,3) |
| 51.71 | 1.7678 | 2.8 | (0,2,-2,0) |
| 51.76 | 1.7663 | 2.8 | (2,-2,0,0) |
| 51.81 | 1.7646 | 2.8 | (2,0,-2,0) |
| 53.80 | 1.7040 | 2.1 | (0,2,-2,1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Sc2Si3 were obtained from the Materials Project database (MP-ID: mp-1219398, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Sc2Si3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.07521640
_cell_length_b 4.08261304
_cell_length_c 6.40459300
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00411198
_symmetry_Int_Tables_number 1
_chemical_formula_structural Sc2Si3
_chemical_formula_sum 'Sc2 Si3'
_cell_volume 92.27691485
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Sc Sc0 1 0.00005300 0.00003800 0.01378200 1.0
Sc Sc1 1 0.00005300 0.00003800 0.48621800 1.0
Si Si2 1 0.33328700 0.66663900 0.75000000 1.0
Si Si3 1 0.66677100 0.33350500 0.25000000 1.0
Si Si4 1 0.66633600 0.33308100 0.75000000 1.0
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