Ga2BiN
高熵材料 HEAMP-ID: mp-1224866 · 空间群: R3m (#160)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ga2BiN were obtained from the Materials Project database (MP-ID: mp-1224866, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ga2BiN
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 3.26722365
_cell_length_b 3.26722365
_cell_length_c 8.80670806
_cell_angle_alpha 79.30993043
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ga2BiN
_chemical_formula_sum 'Ga2 Bi1 N1'
_cell_volume 79.52502234
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ga Ga0 1 0.92208200 0.84416400 0.23375300 1.0
Ga Ga1 1 0.35829500 0.71659100 0.92511400 1.0
Bi Bi2 1 0.46914000 0.93828000 0.59258000 1.0
N N3 1 0.00048300 0.00096500 0.99855200 1.0
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