Ho5Si3
传统材料 TRAMP-ID: mp-13236 · 空间群: P6_3/mcm (#193)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 21.22 | 4.1864 | 13.5 | (2,-1,-1,0) |
| 24.55 | 3.6255 | 39.0 | (2,0,-2,0) |
| 25.52 | 3.4904 | 53.9 | (2,-1,-1,1) |
| 28.23 | 3.1607 | 7.4 | (0,0,0,2) |
| 30.86 | 2.8974 | 19.6 | (0,1,-1,2) |
| 30.86 | 2.8974 | 39.2 | (1,0,-1,2) |
| 32.67 | 2.7406 | 57.1 | (3,-1,-2,0) |
| 35.59 | 2.5225 | 100.0 | (2,-1,-1,2) |
| 35.71 | 2.5145 | 71.4 | (2,1,-3,1) |
| 35.71 | 2.5145 | 35.7 | (3,-1,-2,1) |
| 37.20 | 2.4170 | 13.9 | (0,3,-3,0) |
| 37.20 | 2.4170 | 27.7 | (3,0,-3,0) |
| 43.22 | 2.0932 | 1.7 | (2,2,-4,0) |
| 45.66 | 1.9871 | 1.3 | (2,2,-4,1) |
| 47.35 | 1.9200 | 4.3 | (3,0,-3,2) |
| 48.36 | 1.8822 | 10.0 | (2,-1,-1,3) |
| 50.34 | 1.8128 | 2.1 | (0,4,-4,0) |
| 50.34 | 1.8128 | 4.3 | (4,0,-4,0) |
| 52.43 | 1.7452 | 21.4 | (2,2,-4,2) |
| 52.43 | 1.7452 | 10.7 | (4,-2,-2,2) |
| 54.05 | 1.6967 | 17.4 | (4,-1,-3,2) |
| 54.97 | 1.6705 | 20.7 | (2,1,-3,3) |
| 54.97 | 1.6705 | 10.4 | (3,-1,-2,3) |
| 55.22 | 1.6635 | 5.1 | (3,2,-5,0) |
能量属性
电子属性
磁性属性
弹性属性
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ho5Si3 were obtained from the Materials Project database (MP-ID: mp-13236, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ho5Si3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.37275910
_cell_length_b 8.37276020
_cell_length_c 6.32144178
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999566
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ho5Si3
_chemical_formula_sum 'Ho10 Si6'
_cell_volume 383.78150539
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ho Ho0 1 0.00000000 0.75752152 0.75000000 1.0
Ho Ho1 1 -0.00000000 0.24247848 0.25000000 1.0
Ho Ho2 1 0.75752152 0.75752152 0.25000000 1.0
Ho Ho3 1 0.75752152 -0.00000000 0.75000000 1.0
Ho Ho4 1 0.24247848 0.24247848 0.75000000 1.0
Ho Ho5 1 0.24247848 -0.00000000 0.25000000 1.0
Ho Ho6 1 0.33333300 0.66666700 0.50000000 1.0
Ho Ho7 1 0.66666700 0.33333300 -0.00000000 1.0
Ho Ho8 1 0.66666700 0.33333300 0.50000000 1.0
Ho Ho9 1 0.33333300 0.66666700 -0.00000000 1.0
Si Si10 1 0.39416861 -0.00000000 0.75000000 1.0
Si Si11 1 0.39416861 0.39416861 0.25000000 1.0
Si Si12 1 0.00000000 0.60583139 0.25000000 1.0
Si Si13 1 -0.00000000 0.39416861 0.75000000 1.0
Si Si14 1 0.60583139 0.60583139 0.75000000 1.0
Si Si15 1 0.60583139 -0.00000000 0.25000000 1.0
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