Hf4GaSiH2
高熵材料 HEAMP-ID: mp-3200719 · 空间群: I422 (#97)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 19.07 | 4.6529 | 3.2 | (1,-1,0) |
| 21.31 | 4.1696 | 1.1 | (1,0,-1) |
| 27.10 | 3.2901 | 7.4 | (1,-1,1) |
| 33.24 | 2.6949 | 17.4 | (1,1,-1) |
| 34.73 | 2.5829 | 100.0 | (2,-1,-1) |
| 38.61 | 2.3320 | 11.1 | (2,0,-1) |
| 38.70 | 2.3265 | 4.0 | (2,-2,0) |
| 43.40 | 2.0848 | 16.8 | (2,0,-2) |
| 43.49 | 2.0809 | 20.3 | (2,-2,1) |
| 55.82 | 1.6470 | 4.9 | (3,-1,0) |
| 55.89 | 1.6451 | 2.2 | (2,-2,2) |
| 59.61 | 1.5510 | 6.7 | (3,-3,0) |
| 60.36 | 1.5334 | 7.7 | (3,0,-2) |
| 60.36 | 1.5334 | 12.9 | (2,1,0) |
| 60.50 | 1.5303 | 16.8 | (3,-2,-2) |
| 63.19 | 1.4714 | 2.6 | (3,-3,1) |
| 66.60 | 1.4041 | 1.8 | (3,-1,-3) |
| 66.60 | 1.4041 | 5.3 | (3,-1,1) |
| 69.80 | 1.3475 | 3.7 | (2,2,-2) |
| 69.99 | 1.3443 | 3.7 | (4,-2,-1) |
| 69.99 | 1.3443 | 11.0 | (1,1,-4) |
| 80.50 | 1.1932 | 2.8 | (4,-1,0) |
| 80.50 | 1.1932 | 3.7 | (0,3,-4) |
| 80.62 | 1.1917 | 2.7 | (4,-3,-2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Hf4GaSiH2 were obtained from the Materials Project database (MP-ID: mp-3200719, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Hf4GaSiH2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.37701243
_cell_length_b 5.37701163
_cell_length_c 5.37701174
_cell_angle_alpha 104.54832165
_cell_angle_beta 104.54832827
_cell_angle_gamma 119.84181403
_symmetry_Int_Tables_number 1
_chemical_formula_structural Hf4GaSiH2
_chemical_formula_sum 'Hf4 Ga1 Si1 H2'
_cell_volume 116.68838142
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Hf Hf0 1 0.16238659 0.66238659 0.82477517 1.0
Hf Hf1 1 0.83761341 0.33761341 0.17522483 1.0
Hf Hf2 1 0.33761341 0.16238659 0.50000000 1.0
Hf Hf3 1 0.66238659 0.83761341 0.50000000 1.0
Ga Ga4 1 0.25000000 0.25000000 0.00000000 1.0
Si Si5 1 0.75000000 0.75000000 0.00000000 1.0
H H6 1 0.75000000 0.25000000 0.50000000 1.0
H H7 1 0.25000000 0.75000000 0.50000000 1.0
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