Ba2GaGeI
高熵材料 HEAMP-ID: mp-3201422 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 8.95 | 9.8847 | 2.4 | (0,0,0,2) |
| 22.75 | 3.9087 | 6.5 | (1,0,-1,0) |
| 22.75 | 3.9087 | 3.2 | (1,-1,0,0) |
| 23.20 | 3.8345 | 3.4 | (0,1,-1,1) |
| 23.20 | 3.8345 | 6.7 | (1,0,-1,1) |
| 26.51 | 3.3618 | 13.9 | (1,0,-1,3) |
| 26.51 | 3.3618 | 7.0 | (1,-1,0,3) |
| 29.13 | 3.0658 | 100.0 | (1,0,-1,4) |
| 36.36 | 2.4712 | 12.6 | (0,0,0,8) |
| 39.36 | 2.2892 | 12.8 | (1,0,-1,7) |
| 39.95 | 2.2567 | 40.6 | (2,-1,-1,0) |
| 43.32 | 2.0887 | 5.1 | (1,0,-1,8) |
| 46.47 | 1.9544 | 1.4 | (2,0,-2,0) |
| 46.70 | 1.9449 | 1.0 | (2,0,-2,1) |
| 48.59 | 1.8737 | 3.9 | (2,0,-2,3) |
| 50.20 | 1.8174 | 14.4 | (2,0,-2,4) |
| 50.20 | 1.8174 | 7.2 | (2,-2,0,4) |
| 51.82 | 1.7641 | 2.4 | (1,0,-1,10) |
| 55.11 | 1.6664 | 7.5 | (1,1,-2,8) |
| 55.11 | 1.6664 | 14.9 | (2,-1,-1,8) |
| 56.34 | 1.6329 | 5.6 | (1,0,-1,11) |
| 57.33 | 1.6071 | 4.2 | (2,0,-2,7) |
| 60.39 | 1.5329 | 1.3 | (2,0,-2,8) |
| 61.04 | 1.5181 | 7.4 | (1,0,-1,12) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ba2GaGeI were obtained from the Materials Project database (MP-ID: mp-3201422, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ba2GaGeI
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.51338440
_cell_length_b 4.51338449
_cell_length_c 19.76937286
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999213
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ba2GaGeI
_chemical_formula_sum 'Ba4 Ga2 Ge2 I2'
_cell_volume 348.76124090
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba Ba0 1 0.00000000 0.00000000 0.11857351 1.0
Ba Ba1 1 0.00000000 0.00000000 0.38142649 1.0
Ba Ba2 1 0.00000000 0.00000000 0.61975552 1.0
Ba Ba3 1 0.00000000 0.00000000 0.88024448 1.0
Ga Ga4 1 0.66666800 0.33333500 0.52200788 1.0
Ga Ga5 1 0.66666800 0.33333500 0.97799212 1.0
Ge Ge6 1 0.33333300 0.66666700 0.01890391 1.0
Ge Ge7 1 0.33333300 0.66666700 0.48109609 1.0
I I8 1 0.66666800 0.33333500 0.25000000 1.0
I I9 1 0.33333300 0.66666700 0.75000000 1.0
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