BaSr(GaSi)2
高熵材料 HEAMP-ID: mp-3201657 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 8.91 | 9.9289 | 2.1 | (0,0,0,1) |
| 24.45 | 3.6405 | 10.2 | (1,0,-1,0) |
| 24.45 | 3.6405 | 5.1 | (0,1,-1,0) |
| 26.07 | 3.4180 | 2.3 | (1,0,-1,1) |
| 26.07 | 3.4180 | 1.1 | (0,1,-1,1) |
| 26.94 | 3.3096 | 1.4 | (0,0,0,3) |
| 30.45 | 2.9357 | 100.0 | (1,0,-1,2) |
| 36.19 | 2.4822 | 16.6 | (0,0,0,4) |
| 43.04 | 2.1018 | 20.9 | (2,-1,-1,0) |
| 43.04 | 2.1018 | 10.5 | (1,1,-2,0) |
| 44.16 | 2.0509 | 6.7 | (1,0,-1,4) |
| 50.12 | 1.8202 | 1.5 | (2,0,-2,0) |
| 52.49 | 1.7433 | 1.2 | (1,0,-1,5) |
| 53.63 | 1.7090 | 6.6 | (2,-2,0,2) |
| 53.63 | 1.7090 | 13.2 | (2,0,-2,2) |
| 57.45 | 1.6040 | 17.0 | (2,-1,-1,4) |
| 57.45 | 1.6040 | 8.5 | (1,1,-2,4) |
| 61.56 | 1.5065 | 8.3 | (1,0,-1,6) |
| 61.56 | 1.5065 | 4.1 | (0,1,-1,6) |
| 63.36 | 1.4679 | 2.3 | (2,0,-2,4) |
| 71.10 | 1.3260 | 2.8 | (3,-2,-1,2) |
| 71.10 | 1.3260 | 8.5 | (3,-1,-2,2) |
| 71.10 | 1.3260 | 5.7 | (2,1,-3,2) |
| 76.80 | 1.2411 | 1.6 | (0,0,0,8) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of BaSr(GaSi)2 were obtained from the Materials Project database (MP-ID: mp-3201657, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_BaSr(GaSi)2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.20365042
_cell_length_b 4.20365013
_cell_length_c 9.92888517
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000997
_symmetry_Int_Tables_number 1
_chemical_formula_structural BaSr(GaSi)2
_chemical_formula_sum 'Ba1 Sr1 Ga2 Si2'
_cell_volume 151.94423633
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba Ba0 1 0.00000000 0.00000000 0.50000000 1.0
Sr Sr1 1 0.00000000 0.00000000 0.00000000 1.0
Ga Ga2 1 0.33333300 0.66666700 0.75989228 1.0
Ga Ga3 1 0.33333300 0.66666700 0.24010772 1.0
Si Si4 1 0.66666700 0.33333300 0.76168347 1.0
Si Si5 1 0.66666700 0.33333300 0.23831653 1.0
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