BaIn2GaHg
高熵材料 HEAMP-ID: mp-3202129 · 空间群: I4mm (#107)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 14.78 | 5.9925 | 13.4 | (1,1,-1) |
| 19.98 | 4.4449 | 16.9 | (1,0,-1) |
| 19.98 | 4.4449 | 5.6 | (1,0,0) |
| 26.33 | 3.3844 | 7.2 | (0,0,1) |
| 26.33 | 3.3844 | 7.2 | (1,-1,0) |
| 29.12 | 3.0670 | 47.8 | (2,1,-2) |
| 29.12 | 3.0670 | 15.9 | (2,1,-1) |
| 29.82 | 2.9962 | 3.6 | (2,2,-2) |
| 30.33 | 2.9469 | 100.0 | (1,1,-2) |
| 30.33 | 2.9469 | 33.3 | (2,0,-1) |
| 37.58 | 2.3931 | 39.9 | (1,-1,-1) |
| 37.58 | 2.3931 | 39.9 | (1,-1,1) |
| 40.20 | 2.2434 | 10.4 | (2,2,-3) |
| 40.20 | 2.2434 | 20.8 | (1,3,-2) |
| 40.20 | 2.2434 | 10.4 | (3,1,-2) |
| 40.59 | 2.2225 | 2.4 | (2,0,-2) |
| 40.59 | 2.2225 | 1.2 | (0,2,-2) |
| 40.59 | 2.2225 | 1.2 | (2,0,0) |
| 42.16 | 2.1432 | 32.7 | (3,2,-3) |
| 42.16 | 2.1432 | 10.9 | (3,2,-2) |
| 42.92 | 2.1071 | 1.7 | (1,0,-2) |
| 42.92 | 2.1071 | 3.5 | (1,-2,0) |
| 42.92 | 2.1071 | 1.7 | (1,-2,1) |
| 45.40 | 1.9975 | 4.5 | (3,3,-3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of BaIn2GaHg were obtained from the Materials Project database (MP-ID: mp-3202129, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_BaIn2GaHg
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 6.88211214
_cell_length_b 6.88211353
_cell_length_c 6.88211406
_cell_angle_alpha 139.30287670
_cell_angle_beta 139.30289088
_cell_angle_gamma 58.91331313
_symmetry_Int_Tables_number 1
_chemical_formula_structural BaIn2GaHg
_chemical_formula_sum 'Ba1 In2 Ga1 Hg1'
_cell_volume 137.27555606
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba Ba0 1 0.00039225 0.00039225 0.00000000 1.0
In In1 1 0.74641353 0.24641353 0.50000000 1.0
In In2 1 0.24641353 0.74641353 0.50000000 1.0
Ga Ga3 1 0.61470758 0.61470758 0.00000000 1.0
Hg Hg4 1 0.39207312 0.39207312 1.00000000 1.0
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