Ta10AlGaSi4
高熵材料 HEAMP-ID: mp-3203742 · 空间群: I422 (#97)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 15.37 | 5.7660 | 1.1 | (1,0,0) |
| 24.25 | 3.6698 | 18.6 | (2,0,-1) |
| 24.25 | 3.6698 | 6.2 | (1,1,-2) |
| 27.06 | 3.2947 | 2.6 | (1,-1,1) |
| 27.06 | 3.2947 | 2.6 | (1,-1,-1) |
| 30.01 | 2.9779 | 14.4 | (2,2,-2) |
| 31.02 | 2.8830 | 14.1 | (2,0,0) |
| 31.02 | 2.8830 | 14.1 | (2,0,-2) |
| 31.27 | 2.8607 | 87.5 | (2,-1,0) |
| 35.79 | 2.5092 | 25.0 | (2,2,-1) |
| 35.79 | 2.5092 | 25.0 | (1,3,-2) |
| 38.03 | 2.3664 | 100.0 | (3,0,-1) |
| 38.03 | 2.3664 | 100.0 | (0,3,-1) |
| 38.65 | 2.3297 | 24.0 | (2,-2,0) |
| 40.85 | 2.2092 | 34.9 | (3,1,-1) |
| 40.85 | 2.2092 | 34.9 | (3,1,-3) |
| 41.63 | 2.1696 | 1.7 | (3,-1,-1) |
| 43.43 | 2.0838 | 44.5 | (2,-2,1) |
| 43.43 | 2.0838 | 44.5 | (2,-2,-1) |
| 45.70 | 1.9853 | 26.9 | (3,3,-3) |
| 49.69 | 1.8349 | 1.0 | (4,0,-2) |
| 53.92 | 1.7004 | 1.7 | (2,4,-2) |
| 55.81 | 1.6474 | 1.3 | (2,-2,2) |
| 55.81 | 1.6474 | 1.3 | (2,-2,-2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ta10AlGaSi4 were obtained from the Materials Project database (MP-ID: mp-3203742, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ta10AlGaSi4
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.56186282
_cell_length_b 7.56186202
_cell_length_c 7.56186124
_cell_angle_alpha 128.34000860
_cell_angle_beta 128.34000238
_cell_angle_gamma 76.07487454
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ta10AlGaSi4
_chemical_formula_sum 'Ta10 Al1 Ga1 Si4'
_cell_volume 258.60471383
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ta Ta0 1 0.01546755 0.18682430 0.49921860 1.0
Ta Ta1 1 0.68760570 0.51624895 0.50078140 1.0
Ta Ta2 1 0.51624895 0.01546755 0.82864425 1.0
Ta Ta3 1 0.18682430 0.68760570 0.17135575 1.0
Ta Ta4 1 0.98375105 0.81239430 0.49921860 1.0
Ta Ta5 1 0.31317570 0.48453245 0.50078140 1.0
Ta Ta6 1 0.48453245 0.98375105 0.17135575 1.0
Ta Ta7 1 0.81239430 0.31317570 0.82864425 1.0
Ta Ta8 1 0.00039721 0.00039721 1.00000000 1.0
Ta Ta9 1 0.49960279 0.49960279 0.00000000 1.0
Al Al10 1 0.75000000 0.75000000 0.00000000 1.0
Ga Ga11 1 0.25000000 0.25000000 0.00000000 1.0
Si Si12 1 0.37033490 0.12966510 0.50000000 1.0
Si Si13 1 0.62966510 0.87033490 0.50000000 1.0
Si Si14 1 0.87033490 0.37033490 0.24066981 1.0
Si Si15 1 0.12966510 0.62966510 0.75933019 1.0
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