Ba2GaIrI
高熵材料 HEAMP-ID: mp-3205163 · 空间群: P6_3mc (#186)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 9.13 | 9.6811 | 58.3 | (0,0,0,2) |
| 18.33 | 4.8406 | 7.8 | (0,0,0,4) |
| 23.00 | 3.8671 | 2.3 | (1,0,-1,0) |
| 23.00 | 3.8671 | 1.2 | (0,1,-1,0) |
| 23.46 | 3.7922 | 19.6 | (1,0,-1,1) |
| 23.46 | 3.7922 | 9.8 | (0,1,-1,1) |
| 26.88 | 3.3173 | 14.2 | (1,0,-1,3) |
| 26.88 | 3.3172 | 7.1 | (0,1,-1,3) |
| 29.57 | 3.0213 | 50.0 | (1,0,-1,4) |
| 29.57 | 3.0213 | 100.0 | (1,-1,0,4) |
| 32.73 | 2.7364 | 8.3 | (1,0,-1,5) |
| 32.73 | 2.7364 | 4.2 | (0,1,-1,5) |
| 36.26 | 2.4777 | 11.1 | (1,0,-1,6) |
| 36.26 | 2.4777 | 5.5 | (0,1,-1,6) |
| 37.15 | 2.4203 | 24.5 | (0,0,0,8) |
| 40.08 | 2.2498 | 5.0 | (1,0,-1,7) |
| 40.08 | 2.2498 | 2.5 | (0,1,-1,7) |
| 40.40 | 2.2327 | 23.1 | (2,-1,-1,0) |
| 40.40 | 2.2327 | 23.1 | (1,1,-2,0) |
| 40.40 | 2.2327 | 23.1 | (1,-2,1,0) |
| 41.51 | 2.1756 | 3.3 | (2,-1,-1,2) |
| 41.51 | 2.1756 | 3.3 | (1,1,-2,2) |
| 41.51 | 2.1756 | 3.3 | (1,-2,1,2) |
| 44.70 | 2.0274 | 1.6 | (2,-1,-1,4) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ba2GaIrI were obtained from the Materials Project database (MP-ID: mp-3205163, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ba2GaIrI
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.46538459
_cell_length_b 4.46538186
_cell_length_c 19.36224354
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00001278
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ba2GaIrI
_chemical_formula_sum 'Ba4 Ga2 Ir2 I2'
_cell_volume 334.35184740
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba Ba0 1 0.00000000 0.00000000 0.38808819 1.0
Ba Ba1 1 0.00000000 0.00000000 0.88808819 1.0
Ba Ba2 1 0.00000000 0.00000000 0.61186206 1.0
Ba Ba3 1 0.00000000 0.00000000 0.11186206 1.0
Ga Ga4 1 0.33333300 0.66666700 0.50017478 1.0
Ga Ga5 1 0.66666700 0.33333300 0.00017478 1.0
Ir Ir6 1 0.66666700 0.33333300 0.49984568 1.0
Ir Ir7 1 0.33333300 0.66666700 0.99984568 1.0
I I8 1 0.33333300 0.66666700 0.25003030 1.0
I I9 1 0.66666700 0.33333300 0.75003030 1.0
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