V9Ga4Tc2Ir
高熵材料 HEAMP-ID: mp-3207018 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V9Ga4Tc2Ir were obtained from the Materials Project database (MP-ID: mp-3207018, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_V9Ga4Tc2Ir
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.72561339
_cell_length_b 4.74470809
_cell_length_c 9.60489264
_cell_angle_alpha 89.82689275
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural V9Ga4Tc2Ir
_chemical_formula_sum 'V9 Ga4 Tc2 Ir1'
_cell_volume 215.35661666
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.50000000 0.75362313 0.49803233 1.0
V V1 1 0.74642140 0.00003299 0.25093081 1.0
V V2 1 0.75049822 0.99855278 0.75001843 1.0
V V3 1 0.00000000 0.50386803 0.11910873 1.0
V V4 1 0.00000000 0.49737345 0.63135753 1.0
V V5 1 0.50000000 0.25053766 0.00048769 1.0
V V6 1 0.50000000 0.24256842 0.49977212 1.0
V V7 1 0.25357860 0.00003299 0.25093081 1.0
V V8 1 0.24950178 0.99855278 0.75001843 1.0
Ga Ga9 1 0.50000000 0.49705260 0.24722121 1.0
Ga Ga10 1 0.50000000 0.49679368 0.74552042 1.0
Ga Ga11 1 0.00000000 0.00634840 0.00349964 1.0
Ga Ga12 1 0.00000000 0.99897677 0.50481129 1.0
Tc Tc13 1 0.00000000 0.50293693 0.87455932 1.0
Tc Tc14 1 0.50000000 0.75309080 0.99959153 1.0
Ir Ir15 1 0.00000000 0.49965759 0.37413472 1.0
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