TiNb4GaSb2
高熵材料 HEAMP-ID: mp-3207459 · 空间群: I4/mcm (#140)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 11.78 | 7.5111 | 2.3 | (1,-1,0) |
| 16.69 | 5.3111 | 3.6 | (1,-1,1) |
| 25.51 | 3.4912 | 7.8 | (2,-1,0) |
| 26.54 | 3.3591 | 2.6 | (2,-2,1) |
| 34.85 | 2.5741 | 25.5 | (1,1,-1) |
| 35.09 | 2.5570 | 35.3 | (1,0,-3) |
| 35.87 | 2.5037 | 11.8 | (3,-3,0) |
| 37.88 | 2.3752 | 15.7 | (3,-3,-1) |
| 37.88 | 2.3752 | 15.7 | (3,-3,1) |
| 38.88 | 2.3164 | 26.1 | (2,0,-2) |
| 39.10 | 2.3039 | 100.0 | (3,-2,1) |
| 42.58 | 2.1232 | 17.1 | (3,-1,-1) |
| 43.44 | 2.0832 | 1.8 | (3,-3,2) |
| 48.48 | 1.8778 | 1.1 | (4,-4,0) |
| 49.30 | 1.8483 | 4.8 | (3,-1,-3) |
| 49.48 | 1.8419 | 13.9 | (2,-1,-4) |
| 50.07 | 1.8217 | 3.9 | (4,-4,-1) |
| 50.07 | 1.8217 | 3.9 | (4,-4,1) |
| 50.88 | 1.7947 | 3.1 | (1,1,-4) |
| 50.88 | 1.7947 | 9.4 | (4,-2,-1) |
| 52.42 | 1.7456 | 1.0 | (4,-2,0) |
| 61.24 | 1.5135 | 1.9 | (2,-1,-5) |
| 61.24 | 1.5135 | 5.8 | (1,-2,5) |
| 61.75 | 1.5022 | 6.9 | (4,-4,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of TiNb4GaSb2 were obtained from the Materials Project database (MP-ID: mp-3207459, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_TiNb4GaSb2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.93989866
_cell_length_b 7.93989849
_cell_length_c 7.93989877
_cell_angle_alpha 96.03305562
_cell_angle_beta 96.03306144
_cell_angle_gamma 142.16640637
_symmetry_Int_Tables_number 1
_chemical_formula_structural TiNb4GaSb2
_chemical_formula_sum 'Ti2 Nb8 Ga2 Sb4'
_cell_volume 290.43855549
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ti Ti0 1 0.25000000 0.75000000 0.50000000 1.0
Ti Ti1 1 0.75000000 0.25000000 0.50000000 1.0
Nb Nb2 1 0.78263832 0.92548004 0.70812036 1.0
Nb Nb3 1 0.92548004 0.21736168 0.14284072 1.0
Nb Nb4 1 0.07451996 0.78263832 0.85715928 1.0
Nb Nb5 1 0.21736168 0.07451996 0.29187964 1.0
Nb Nb6 1 0.57451996 0.71736168 0.29187964 1.0
Nb Nb7 1 0.42548004 0.28263832 0.70812036 1.0
Nb Nb8 1 0.28263832 0.57451996 0.85715928 1.0
Nb Nb9 1 0.71736168 0.42548004 0.14284072 1.0
Ga Ga10 1 0.75000000 0.75000000 0.00000000 1.0
Ga Ga11 1 0.25000000 0.25000000 0.00000000 1.0
Sb Sb12 1 0.33596688 0.83596688 0.17193576 1.0
Sb Sb13 1 0.83596688 0.66403312 0.50000000 1.0
Sb Sb14 1 0.16403312 0.33596688 0.50000000 1.0
Sb Sb15 1 0.66403312 0.16403312 0.82806424 1.0
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