Hf3SiTc3Sb2
高熵材料 HEAMP-ID: mp-3209598 · 空间群: P-62m (#189)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 14.32 | 6.1861 | 2.7 | (0,1,0) |
| 14.32 | 6.1861 | 2.7 | (1,0,-1) |
| 14.32 | 6.1849 | 2.8 | (1,1,-1) |
| 24.93 | 3.5718 | 13.1 | (1,-1,-1) |
| 24.93 | 3.5711 | 26.2 | (1,2,-1) |
| 28.73 | 3.1069 | 1.6 | (1,-2,1) |
| 35.44 | 2.5331 | 99.9 | (2,-2,0) |
| 35.44 | 2.5328 | 100.0 | (0,3,-2) |
| 35.44 | 2.5328 | 100.0 | (2,1,0) |
| 38.40 | 2.3441 | 65.9 | (3,-1,-1) |
| 38.41 | 2.3438 | 16.5 | (1,3,-3) |
| 38.41 | 2.3438 | 16.5 | (3,1,-1) |
| 38.50 | 2.3383 | 33.8 | (1,-2,-1) |
| 38.51 | 2.3379 | 33.6 | (1,3,-1) |
| 38.51 | 2.3377 | 33.7 | (2,3,-2) |
| 43.91 | 2.0621 | 57.3 | (0,3,0) |
| 43.92 | 2.0616 | 28.7 | (3,3,-3) |
| 46.33 | 1.9598 | 3.0 | (2,-3,0) |
| 46.33 | 1.9598 | 9.1 | (3,-2,-1) |
| 46.33 | 1.9596 | 3.1 | (0,4,-2) |
| 46.33 | 1.9596 | 9.2 | (2,2,-4) |
| 46.34 | 1.9595 | 3.1 | (1,4,-3) |
| 46.34 | 1.9595 | 9.2 | (2,3,-4) |
| 50.82 | 1.7965 | 43.2 | (2,-2,2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Hf3SiTc3Sb2 were obtained from the Materials Project database (MP-ID: mp-3209598, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Hf3SiTc3Sb2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.99498758
_cell_length_b 7.99498893
_cell_length_c 7.99498839
_cell_angle_alpha 126.92848116
_cell_angle_beta 126.58924433
_cell_angle_gamma 78.64474273
_symmetry_Int_Tables_number 1
_chemical_formula_structural Hf3SiTc3Sb2
_chemical_formula_sum 'Hf6 Si2 Tc6 Sb4'
_cell_volume 317.49172659
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Hf Hf0 1 0.44094799 0.63514419 0.69419620 1.0
Hf Hf1 1 0.55905201 0.25324820 0.19419620 1.0
Hf Hf2 1 0.74991689 0.87160935 0.62169146 1.0
Hf Hf3 1 0.25008311 0.87177657 0.12169146 1.0
Hf Hf4 1 0.05945107 0.25334756 0.69389649 1.0
Hf Hf5 1 0.94054893 0.63444442 0.19389649 1.0
Si Si6 1 0.25039007 0.25354068 0.50315161 1.0
Si Si7 1 0.74960993 0.25276154 0.00315161 1.0
Tc Tc8 1 0.50000000 0.49237743 0.99237743 1.0
Tc Tc9 1 1.00000000 0.49237743 0.49237743 1.0
Tc Tc10 1 0.11901028 0.25340122 0.13329051 1.0
Tc Tc11 1 0.88098972 0.01428023 0.13439094 1.0
Tc Tc12 1 0.37988929 0.01428023 0.63329051 1.0
Tc Tc13 1 0.62011071 0.25340122 0.63439094 1.0
Sb Sb14 1 0.33323456 0.58673068 0.25330925 1.0
Sb Sb15 1 0.66676544 0.92007468 0.25349511 1.0
Sb Sb16 1 0.16657957 0.92007468 0.75330925 1.0
Sb Sb17 1 0.83342043 0.58673068 0.75349511 1.0
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