Ta3Nb2GaSi2
高熵材料 HEAMP-ID: mp-3210737 · 空间群: I4cm (#108)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 14.86 | 5.9636 | 21.1 | (1,1,-1) |
| 19.00 | 4.6718 | 6.4 | (1,-1,0) |
| 24.20 | 3.6777 | 17.3 | (2,0,-1) |
| 29.97 | 2.9818 | 5.1 | (2,2,-2) |
| 30.95 | 2.8897 | 11.2 | (2,0,0) |
| 30.95 | 2.8897 | 11.2 | (0,2,0) |
| 31.19 | 2.8680 | 47.4 | (2,-1,0) |
| 31.19 | 2.8680 | 15.8 | (0,1,1) |
| 35.72 | 2.5135 | 50.3 | (3,1,-2) |
| 37.94 | 2.3715 | 33.3 | (3,0,-1) |
| 37.94 | 2.3715 | 100.0 | (3,0,-2) |
| 38.54 | 2.3359 | 24.6 | (2,-2,0) |
| 40.77 | 2.2135 | 16.3 | (3,1,-1) |
| 40.77 | 2.2135 | 49.0 | (1,3,-1) |
| 41.52 | 2.1750 | 1.7 | (3,-1,-1) |
| 43.31 | 2.0893 | 38.8 | (2,-2,1) |
| 43.31 | 2.0893 | 38.8 | (2,-2,-1) |
| 45.64 | 1.9879 | 18.4 | (3,3,-3) |
| 46.03 | 1.9718 | 3.8 | (2,0,1) |
| 49.08 | 1.8561 | 6.3 | (3,2,-1) |
| 49.57 | 1.8388 | 2.7 | (4,0,-2) |
| 53.82 | 1.7033 | 1.2 | (2,4,-2) |
| 57.93 | 1.5918 | 1.4 | (1,-3,-1) |
| 58.08 | 1.5882 | 5.0 | (3,-2,1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ta3Nb2GaSi2 were obtained from the Materials Project database (MP-ID: mp-3210737, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ta3Nb2GaSi2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.57563015
_cell_length_b 7.57562934
_cell_length_c 7.57562905
_cell_angle_alpha 128.29363443
_cell_angle_beta 128.29362822
_cell_angle_gamma 76.14983761
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ta3Nb2GaSi2
_chemical_formula_sum 'Ta6 Nb4 Ga2 Si4'
_cell_volume 260.32132420
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ta Ta0 1 0.98325388 0.81258641 0.50000000 1.0
Ta Ta1 1 0.31258641 0.48325388 0.50000000 1.0
Ta Ta2 1 0.48325388 0.98325388 0.17066646 1.0
Ta Ta3 1 0.81258641 0.31258641 0.82933354 1.0
Ta Ta4 1 0.00049300 0.00049300 1.00000000 1.0
Ta Ta5 1 0.50049300 0.50049300 1.00000000 1.0
Nb Nb6 1 0.01732099 0.18669025 0.50000000 1.0
Nb Nb7 1 0.68669025 0.51732099 0.50000000 1.0
Nb Nb8 1 0.51732099 0.01732099 0.83063174 1.0
Nb Nb9 1 0.18669025 0.68669025 0.16936826 1.0
Ga Ga10 1 0.74934171 0.74934171 0.00000000 1.0
Ga Ga11 1 0.24934171 0.24934171 0.00000000 1.0
Si Si12 1 0.37082154 0.12949223 0.50000000 1.0
Si Si13 1 0.62949223 0.87082154 0.50000000 1.0
Si Si14 1 0.87082154 0.37082154 0.24132831 1.0
Si Si15 1 0.12949223 0.62949223 0.75867169 1.0
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