Y4GaSi7Tc6
高熵材料 HEAMP-ID: mp-3215107 · 空间群: P1 (#1)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Y4GaSi7Tc6 were obtained from the Materials Project database (MP-ID: mp-3215107, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_Y4GaSi7Tc6
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 6.79208974
_cell_length_b 6.73374633
_cell_length_c 6.80559524
_cell_angle_alpha 70.09754594
_cell_angle_beta 89.63139836
_cell_angle_gamma 89.92296903
_symmetry_Int_Tables_number 1
_chemical_formula_structural Y4GaSi7Tc6
_chemical_formula_sum 'Y4 Ga1 Si7 Tc6'
_cell_volume 292.66537103
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Y Y0 1 0.16952174 0.94320541 0.19000308 1.0
Y Y1 1 0.33050688 0.44372795 0.19364625 1.0
Y Y2 1 0.83334288 0.05804981 0.80485262 1.0
Y Y3 1 0.66830253 0.55981502 0.80574910 1.0
Ga Ga4 1 0.55452939 0.12558641 0.10261836 1.0
Si Si5 1 0.35729337 0.63096529 0.51395663 1.0
Si Si6 1 0.85548077 0.86956677 0.48017946 1.0
Si Si7 1 0.05084949 0.38116011 0.89604947 1.0
Si Si8 1 0.14138761 0.12780735 0.51096964 1.0
Si Si9 1 0.63799610 0.36584630 0.48910684 1.0
Si Si10 1 0.94992965 0.62220079 0.10327846 1.0
Si Si11 1 0.44970067 0.87989979 0.89629943 1.0
Tc Tc12 1 0.85682058 0.24759039 0.24811349 1.0
Tc Tc13 1 0.34000933 0.25674717 0.75021673 1.0
Tc Tc14 1 0.15426704 0.75837129 0.76379132 1.0
Tc Tc15 1 0.65086375 0.73077120 0.24177613 1.0
Tc Tc16 1 0.50265286 0.99102880 0.50828847 1.0
Tc Tc17 1 0.99654434 0.50766017 0.50110253 1.0
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