ThSiNiH2
高熵材料 HEAMP-ID: mp-3222034 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 21.75 | 4.0859 | 10.8 | (0,0,0,2) |
| 24.84 | 3.5851 | 28.5 | (1,0,-1,0) |
| 24.84 | 3.5851 | 14.3 | (0,1,-1,0) |
| 27.16 | 3.2831 | 2.5 | (1,0,-1,1) |
| 33.25 | 2.6948 | 100.0 | (1,0,-1,2) |
| 43.73 | 2.0699 | 33.2 | (2,-1,-1,0) |
| 44.34 | 2.0430 | 10.5 | (0,0,0,4) |
| 49.36 | 1.8465 | 8.4 | (2,-1,-1,2) |
| 50.94 | 1.7926 | 4.5 | (2,0,-2,0) |
| 50.94 | 1.7926 | 2.2 | (0,2,-2,0) |
| 51.48 | 1.7750 | 8.7 | (1,0,-1,4) |
| 51.48 | 1.7750 | 4.4 | (0,1,-1,4) |
| 56.02 | 1.6415 | 23.0 | (2,0,-2,2) |
| 64.04 | 1.4540 | 21.1 | (2,-1,-1,4) |
| 69.35 | 1.3551 | 3.7 | (3,-1,-2,0) |
| 69.35 | 1.3551 | 1.9 | (1,2,-3,0) |
| 69.80 | 1.3474 | 5.5 | (2,0,-2,4) |
| 73.65 | 1.2862 | 13.8 | (3,-1,-2,2) |
| 73.65 | 1.2862 | 6.9 | (1,2,-3,2) |
| 74.53 | 1.2732 | 10.1 | (1,0,-1,6) |
| 80.35 | 1.1950 | 3.7 | (3,0,-3,0) |
| 80.35 | 1.1950 | 1.9 | (0,3,-3,0) |
| 84.46 | 1.1470 | 1.4 | (3,0,-3,2) |
| 85.31 | 1.1378 | 2.0 | (2,-1,-1,6) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of ThSiNiH2 were obtained from the Materials Project database (MP-ID: mp-3222034, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_ThSiNiH2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.13973238
_cell_length_b 4.13973204
_cell_length_c 8.17183001
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000268
_symmetry_Int_Tables_number 1
_chemical_formula_structural ThSiNiH2
_chemical_formula_sum 'Th2 Si2 Ni2 H4'
_cell_volume 121.28146689
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.00000000 0.00000000 0.50000000 1.0
Th Th1 1 0.00000000 0.00000000 0.00000000 1.0
Si Si2 1 0.33333300 0.66666700 0.75000000 1.0
Si Si3 1 0.66666700 0.33333300 0.25000000 1.0
Ni Ni4 1 0.66666700 0.33333300 0.75000000 1.0
Ni Ni5 1 0.33333300 0.66666700 0.25000000 1.0
H H6 1 0.33333300 0.66666700 0.44691916 1.0
H H7 1 0.66666700 0.33333300 0.55308084 1.0
H H8 1 0.33333300 0.66666700 0.05308084 1.0
H H9 1 0.66666700 0.33333300 0.94691916 1.0
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