Sc3GaSi2Os3
高熵材料 HEAMP-ID: mp-3222298 · 空间群: P-6 (#174)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Sc3GaSi2Os3 were obtained from the Materials Project database (MP-ID: mp-3222298, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_Sc3GaSi2Os3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 6.98383085
_cell_length_b 6.98383105
_cell_length_c 3.32312923
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000381
_symmetry_Int_Tables_number 1
_chemical_formula_structural Sc3GaSi2Os3
_chemical_formula_sum 'Sc3 Ga1 Si2 Os3'
_cell_volume 140.36708519
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Sc Sc0 1 0.39823818 0.39465235 0.50000000 1.0
Sc Sc1 1 0.60534765 0.00358683 0.50000000 1.0
Sc Sc2 1 0.99641317 0.60176182 0.50000000 1.0
Ga Ga3 1 0.33333300 0.66666700 0.00000000 1.0
Si Si4 1 0.66666700 0.33333300 0.00000000 1.0
Si Si5 1 0.00000000 0.00000000 0.50000000 1.0
Os Os6 1 0.75057459 0.74231692 0.00000000 1.0
Os Os7 1 0.25768308 0.00825667 0.00000000 1.0
Os Os8 1 0.99174333 0.24942541 0.00000000 1.0
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