InSi4SnPt4
高熵材料 HEAMP-ID: mp-3223179 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 14.17 | 6.2489 | 12.2 | (0,0,0,2) |
| 25.49 | 3.4948 | 11.9 | (1,0,-1,0) |
| 26.48 | 3.3657 | 100.0 | (1,0,-1,1) |
| 28.57 | 3.1245 | 20.2 | (0,0,0,4) |
| 29.28 | 3.0502 | 28.6 | (1,0,-1,2) |
| 33.47 | 2.6774 | 34.6 | (1,0,-1,3) |
| 38.66 | 2.3293 | 75.8 | (1,0,-1,4) |
| 43.44 | 2.0830 | 1.3 | (0,0,0,6) |
| 44.57 | 2.0331 | 47.2 | (1,0,-1,5) |
| 44.93 | 2.0177 | 26.6 | (1,-2,1,0) |
| 44.93 | 2.0177 | 53.2 | (2,-1,-1,0) |
| 47.34 | 1.9201 | 4.0 | (2,-1,-1,2) |
| 51.04 | 1.7893 | 1.7 | (1,-1,0,6) |
| 51.04 | 1.7893 | 3.4 | (1,0,-1,6) |
| 52.36 | 1.7474 | 1.7 | (2,0,-2,0) |
| 52.91 | 1.7306 | 15.6 | (2,0,-2,1) |
| 54.11 | 1.6950 | 7.1 | (1,-2,1,4) |
| 54.11 | 1.6950 | 14.1 | (2,-1,-1,4) |
| 54.53 | 1.6828 | 4.9 | (2,0,-2,2) |
| 57.17 | 1.6114 | 5.3 | (2,-2,0,3) |
| 57.17 | 1.6114 | 2.6 | (2,0,-2,3) |
| 58.01 | 1.5899 | 11.3 | (1,0,-1,7) |
| 59.14 | 1.5622 | 7.5 | (0,0,0,8) |
| 60.73 | 1.5251 | 20.4 | (2,0,-2,4) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of InSi4SnPt4 were obtained from the Materials Project database (MP-ID: mp-3223179, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_InSi4SnPt4
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.03540290
_cell_length_b 4.03540333
_cell_length_c 12.49782044
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000441
_symmetry_Int_Tables_number 1
_chemical_formula_structural InSi4SnPt4
_chemical_formula_sum 'In1 Si4 Sn1 Pt4'
_cell_volume 176.25390273
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
In In0 1 0.00000000 0.00000000 0.25000000 1.0
Si Si1 1 0.33333300 0.66666700 0.56303871 1.0
Si Si2 1 0.66666700 0.33333300 0.06551017 1.0
Si Si3 1 0.66666700 0.33333300 0.43448983 1.0
Si Si4 1 0.33333300 0.66666700 0.93696129 1.0
Sn Sn5 1 0.00000000 0.00000000 0.75000000 1.0
Pt Pt6 1 0.33333300 0.66666700 0.37257977 1.0
Pt Pt7 1 0.66666700 0.33333300 0.87119427 1.0
Pt Pt8 1 0.66666700 0.33333300 0.62880573 1.0
Pt Pt9 1 0.33333300 0.66666700 0.12742023 1.0
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