V5GaSiOs
高熵材料 HEAMP-ID: mp-3230385 · 空间群: Pmm2 (#25)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V5GaSiOs were obtained from the Materials Project database (MP-ID: mp-3230385, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_V5GaSiOs
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.69313640
_cell_length_b 4.65588174
_cell_length_c 4.79358230
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural V5GaSiOs
_chemical_formula_sum 'V5 Ga1 Si1 Os1'
_cell_volume 104.74307140
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.50000000 0.24396111 0.99858627 1.0
V V1 1 0.75304998 0.00000000 0.49885163 1.0
V V2 1 0.00000000 0.50000000 0.24942314 1.0
V V3 1 0.50000000 0.75603889 0.99858627 1.0
V V4 1 0.24695002 0.00000000 0.49885163 1.0
Ga Ga5 1 0.50000000 0.50000000 0.49237361 1.0
Si Si6 1 0.00000000 0.00000000 0.00913548 1.0
Os Os7 1 0.00000000 0.50000000 0.75419397 1.0
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