TiVGaC
高熵材料 HEAMP-ID: mp-3230634 · 空间群: P6_3mc (#186)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 13.47 | 6.5755 | 3.5 | (0,0,0,2) |
| 27.12 | 3.2878 | 2.7 | (0,0,0,4) |
| 34.79 | 2.5785 | 10.0 | (1,-1,0,0) |
| 34.79 | 2.5785 | 20.1 | (1,0,-1,0) |
| 35.48 | 2.5303 | 2.7 | (1,-1,0,1) |
| 35.48 | 2.5303 | 1.3 | (1,0,-1,1) |
| 37.46 | 2.4005 | 3.6 | (1,-1,0,2) |
| 37.46 | 2.4005 | 1.8 | (1,0,-1,2) |
| 40.59 | 2.2225 | 100.0 | (1,-1,0,3) |
| 40.59 | 2.2225 | 50.0 | (1,0,-1,3) |
| 41.19 | 2.1919 | 28.0 | (0,0,0,6) |
| 49.50 | 1.8413 | 1.3 | (1,-1,0,5) |
| 49.50 | 1.8413 | 2.7 | (1,0,-1,5) |
| 54.98 | 1.6700 | 15.4 | (1,-1,0,6) |
| 54.98 | 1.6700 | 7.7 | (1,0,-1,6) |
| 55.93 | 1.6439 | 1.2 | (0,0,0,8) |
| 62.38 | 1.4887 | 9.5 | (1,-2,1,0) |
| 62.38 | 1.4887 | 9.5 | (2,-1,-1,0) |
| 62.38 | 1.4887 | 9.5 | (1,1,-2,0) |
| 73.45 | 1.2892 | 1.0 | (2,-2,0,0) |
| 73.45 | 1.2892 | 1.0 | (0,2,-2,0) |
| 73.45 | 1.2892 | 1.0 | (2,0,-2,0) |
| 74.66 | 1.2713 | 21.1 | (1,0,-1,9) |
| 77.11 | 1.2369 | 6.6 | (2,-2,0,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of TiVGaC were obtained from the Materials Project database (MP-ID: mp-3230634, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_TiVGaC
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 2.97736508
_cell_length_b 2.97736564
_cell_length_c 13.15107931
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00001579
_symmetry_Int_Tables_number 1
_chemical_formula_structural TiVGaC
_chemical_formula_sum 'Ti2 V2 Ga2 C2'
_cell_volume 100.96159958
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ti Ti0 1 0.66666700 0.33333300 0.91316590 1.0
Ti Ti1 1 0.33333300 0.66666700 0.41316590 1.0
V V2 1 0.33333300 0.66666700 0.08685357 1.0
V V3 1 0.66666700 0.33333300 0.58685357 1.0
Ga Ga4 1 0.33333300 0.66666700 0.74570037 1.0
Ga Ga5 1 0.66666700 0.33333300 0.24570037 1.0
C C6 1 0.00000000 0.00000000 0.50427916 1.0
C C7 1 0.00000000 0.00000000 0.00427916 1.0
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