Hf3SiTc3Ge2
高熵材料 HEAMP-ID: mp-3231852 · 空间群: P-62m (#189)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 14.61 | 6.0634 | 2.8 | (1,0,-1,0) |
| 25.44 | 3.5007 | 17.4 | (2,-1,-1,0) |
| 29.46 | 3.0317 | 1.2 | (2,-2,0,0) |
| 29.46 | 3.0317 | 2.4 | (2,0,-2,0) |
| 30.27 | 2.9522 | 4.2 | (1,0,-1,1) |
| 36.97 | 2.4315 | 100.0 | (2,-1,-1,1) |
| 39.31 | 2.2917 | 22.3 | (3,-2,-1,0) |
| 39.31 | 2.2917 | 22.3 | (3,-1,-2,0) |
| 39.95 | 2.2568 | 30.7 | (2,-2,0,1) |
| 39.95 | 2.2568 | 15.4 | (2,0,-2,1) |
| 44.84 | 2.0211 | 16.4 | (3,-3,0,0) |
| 44.84 | 2.0211 | 8.2 | (3,0,-3,0) |
| 47.96 | 1.8968 | 7.1 | (3,-1,-2,1) |
| 52.26 | 1.7504 | 1.7 | (4,-2,-2,0) |
| 54.28 | 1.6900 | 13.8 | (0,0,0,2) |
| 54.57 | 1.6817 | 11.4 | (4,-1,-3,0) |
| 54.57 | 1.6817 | 2.3 | (3,1,-4,0) |
| 59.47 | 1.5543 | 4.3 | (4,-2,-2,1) |
| 60.87 | 1.5219 | 1.1 | (1,-2,1,2) |
| 60.87 | 1.5219 | 2.3 | (2,-1,-1,2) |
| 61.60 | 1.5056 | 17.2 | (4,-1,-3,1) |
| 61.60 | 1.5056 | 3.4 | (3,1,-4,1) |
| 67.31 | 1.3910 | 1.4 | (5,-2,-3,0) |
| 67.75 | 1.3831 | 2.8 | (4,-4,0,1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Hf3SiTc3Ge2 were obtained from the Materials Project database (MP-ID: mp-3231852, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Hf3SiTc3Ge2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.00139498
_cell_length_b 7.00139556
_cell_length_c 3.37990913
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000654
_symmetry_Int_Tables_number 1
_chemical_formula_structural Hf3SiTc3Ge2
_chemical_formula_sum 'Hf3 Si1 Tc3 Ge2'
_cell_volume 143.48444464
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Hf Hf0 1 0.39782654 0.39782654 0.50000000 1.0
Hf Hf1 1 0.60217346 0.00000000 0.50000000 1.0
Hf Hf2 1 0.00000000 0.60217346 0.50000000 1.0
Si Si3 1 0.00000000 0.00000000 0.50000000 1.0
Tc Tc4 1 0.74825308 0.74825308 0.00000000 1.0
Tc Tc5 1 0.25174692 1.00000000 0.00000000 1.0
Tc Tc6 1 1.00000000 0.25174692 0.00000000 1.0
Ge Ge7 1 0.66666700 0.33333300 0.00000000 1.0
Ge Ge8 1 0.33333300 0.66666700 0.00000000 1.0
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