TbGaSiRh2
高熵材料 HEAMP-ID: mp-3245129 · 空间群: I4mm (#107)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 17.69 | 5.0138 | 3.4 | (1,1,-1) |
| 23.36 | 3.8085 | 16.3 | (1,0,-1) |
| 34.56 | 2.5950 | 20.5 | (2,1,-2) |
| 34.56 | 2.5950 | 20.5 | (2,1,-1) |
| 35.66 | 2.5176 | 100.0 | (1,1,-2) |
| 35.82 | 2.5069 | 12.5 | (2,2,-2) |
| 43.99 | 2.0585 | 21.7 | (1,-1,-1) |
| 43.99 | 2.0585 | 21.7 | (1,-1,1) |
| 47.89 | 1.8996 | 5.3 | (2,2,-3) |
| 47.89 | 1.8996 | 1.8 | (2,2,-1) |
| 50.39 | 1.8109 | 3.3 | (1,0,-2) |
| 50.39 | 1.8109 | 1.1 | (1,-2,1) |
| 50.63 | 1.8030 | 14.2 | (3,2,-3) |
| 57.11 | 1.6127 | 4.8 | (2,1,-3) |
| 57.11 | 1.6127 | 14.3 | (2,1,0) |
| 57.97 | 1.5909 | 6.2 | (3,1,-3) |
| 57.97 | 1.5909 | 6.2 | (3,1,-1) |
| 63.96 | 1.4556 | 7.0 | (0,0,2) |
| 63.96 | 1.4556 | 7.0 | (2,-2,0) |
| 64.27 | 1.4494 | 3.9 | (3,3,-4) |
| 64.27 | 1.4494 | 11.6 | (4,2,-3) |
| 69.28 | 1.3563 | 2.7 | (3,2,-4) |
| 69.28 | 1.3563 | 2.7 | (4,1,-3) |
| 69.28 | 1.3563 | 5.5 | (3,2,-1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of TbGaSiRh2 were obtained from the Materials Project database (MP-ID: mp-3245129, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_TbGaSiRh2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.79771966
_cell_length_b 5.79771979
_cell_length_c 5.79772044
_cell_angle_alpha 138.40621147
_cell_angle_beta 138.40621605
_cell_angle_gamma 60.28142840
_symmetry_Int_Tables_number 1
_chemical_formula_structural TbGaSiRh2
_chemical_formula_sum 'Tb1 Ga1 Si1 Rh2'
_cell_volume 84.98438866
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Tb Tb0 1 0.99775799 0.99775799 0.00000000 1.0
Ga Ga1 1 0.61936481 0.61936481 0.00000000 1.0
Si Si2 1 0.36928531 0.36928531 1.00000000 1.0
Rh Rh3 1 0.75679544 0.25679544 0.50000000 1.0
Rh Rh4 1 0.25679544 0.75679544 0.50000000 1.0
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