BaYb(GaSn)2
高熵材料 HEAMP-ID: mp-3247909 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 9.42 | 9.3860 | 21.3 | (0,0,0,2) |
| 22.66 | 3.9242 | 1.9 | (0,1,-1,0) |
| 22.66 | 3.9242 | 3.8 | (1,0,-1,0) |
| 26.82 | 3.3245 | 17.0 | (1,0,-1,3) |
| 28.53 | 3.1287 | 1.6 | (0,0,0,6) |
| 29.68 | 3.0104 | 100.0 | (1,0,-1,4) |
| 33.02 | 2.7128 | 2.2 | (1,0,-1,5) |
| 36.74 | 2.4463 | 1.5 | (0,1,-1,6) |
| 36.74 | 2.4463 | 2.9 | (1,0,-1,6) |
| 38.36 | 2.3465 | 7.5 | (0,0,0,8) |
| 39.79 | 2.2657 | 55.4 | (2,-1,-1,0) |
| 40.75 | 2.2141 | 13.8 | (1,0,-1,7) |
| 40.98 | 2.2024 | 2.7 | (1,1,-2,2) |
| 40.98 | 2.2024 | 1.3 | (2,-1,-1,2) |
| 45.01 | 2.0139 | 3.2 | (0,1,-1,8) |
| 45.01 | 2.0139 | 6.3 | (1,0,-1,8) |
| 48.63 | 1.8722 | 3.5 | (2,0,-2,3) |
| 49.49 | 1.8418 | 2.4 | (0,1,-1,9) |
| 49.49 | 1.8418 | 4.7 | (1,0,-1,9) |
| 49.68 | 1.8350 | 1.3 | (1,1,-2,6) |
| 50.41 | 1.8103 | 23.1 | (2,0,-2,4) |
| 56.46 | 1.6299 | 10.0 | (1,1,-2,8) |
| 56.46 | 1.6299 | 5.0 | (2,-1,-1,8) |
| 58.27 | 1.5835 | 1.6 | (0,2,-2,7) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of BaYb(GaSn)2 were obtained from the Materials Project database (MP-ID: mp-3247909, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_BaYb(GaSn)2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.53131098
_cell_length_b 4.53131181
_cell_length_c 18.77191889
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999397
_symmetry_Int_Tables_number 1
_chemical_formula_structural BaYb(GaSn)2
_chemical_formula_sum 'Ba2 Yb2 Ga4 Sn4'
_cell_volume 333.80062395
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba Ba0 1 0.00000000 0.00000000 0.50000000 1.0
Ba Ba1 1 0.00000000 0.00000000 0.00000000 1.0
Yb Yb2 1 0.00000000 0.00000000 0.25000000 1.0
Yb Yb3 1 0.00000000 0.00000000 0.75000000 1.0
Ga Ga4 1 0.33333300 0.66666700 0.32399249 1.0
Ga Ga5 1 0.66666700 0.33333300 0.67600751 1.0
Ga Ga6 1 0.66666700 0.33333300 0.82399249 1.0
Ga Ga7 1 0.33333300 0.66666700 0.17600751 1.0
Sn Sn8 1 0.33333300 0.66666700 0.87168688 1.0
Sn Sn9 1 0.66666700 0.33333300 0.12831312 1.0
Sn Sn10 1 0.66666700 0.33333300 0.37168688 1.0
Sn Sn11 1 0.33333300 0.66666700 0.62831312 1.0
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