Ho2GaNiI2
高熵材料 HEAMP-ID: mp-3248950 · 空间群: P3m1 (#156)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 7.56 | 11.6893 | 74.8 | (0,0,0,1) |
| 15.16 | 5.8446 | 5.1 | (0,0,0,2) |
| 24.99 | 3.5629 | 7.0 | (1,0,-1,0) |
| 26.15 | 3.4081 | 32.7 | (1,0,-1,1) |
| 26.15 | 3.4081 | 16.4 | (1,-1,0,1) |
| 29.36 | 3.0422 | 20.9 | (1,0,-1,2) |
| 29.36 | 3.0422 | 10.4 | (1,-1,0,2) |
| 30.59 | 2.9223 | 4.2 | (0,0,0,4) |
| 34.10 | 2.6294 | 100.0 | (1,0,-1,3) |
| 39.90 | 2.2595 | 21.2 | (1,0,-1,4) |
| 44.02 | 2.0570 | 15.8 | (1,1,-2,0) |
| 44.02 | 2.0570 | 31.6 | (2,-1,-1,0) |
| 44.73 | 2.0259 | 2.2 | (1,1,-2,1) |
| 44.73 | 2.0259 | 4.5 | (2,-1,-1,1) |
| 46.46 | 1.9546 | 7.1 | (1,0,-1,5) |
| 46.62 | 1.9482 | 12.3 | (0,0,0,6) |
| 46.82 | 1.9404 | 1.2 | (2,-1,-1,2) |
| 51.92 | 1.7611 | 5.0 | (2,0,-2,1) |
| 51.92 | 1.7611 | 2.5 | (2,-2,0,1) |
| 53.80 | 1.7041 | 1.9 | (0,2,-2,2) |
| 53.80 | 1.7041 | 3.8 | (2,0,-2,2) |
| 54.56 | 1.6821 | 5.1 | (2,-1,-1,4) |
| 54.99 | 1.6699 | 1.2 | (0,0,0,7) |
| 56.83 | 1.6202 | 15.3 | (2,0,-2,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ho2GaNiI2 were obtained from the Materials Project database (MP-ID: mp-3248950, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ho2GaNiI2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.11408153
_cell_length_b 4.11408164
_cell_length_c 11.68926908
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999130
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ho2GaNiI2
_chemical_formula_sum 'Ho2 Ga1 Ni1 I2'
_cell_volume 171.34199713
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ho Ho0 1 0.00000000 0.00000000 0.15637462 1.0
Ho Ho1 1 0.00000000 0.00000000 0.84479856 1.0
Ga Ga2 1 0.66666700 0.33333300 0.00373799 1.0
Ni Ni3 1 0.33333300 0.66666600 0.99548679 1.0
I I4 1 0.33333300 0.66666600 0.33405076 1.0
I I5 1 0.66666700 0.33333300 0.66555127 1.0
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