ThSi2TcIr
高熵材料 HEAMP-ID: mp-3250582 · 空间群: I-4m2 (#119)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 18.14 | 4.8900 | 3.7 | (1,1,-1) |
| 22.89 | 3.8844 | 30.4 | (0,1,0) |
| 22.89 | 3.8844 | 30.4 | (0,1,-1) |
| 34.73 | 2.5827 | 21.1 | (1,2,-1) |
| 34.73 | 2.5827 | 21.1 | (1,2,-2) |
| 35.16 | 2.5527 | 100.0 | (2,0,-1) |
| 35.16 | 2.5527 | 33.3 | (1,1,-2) |
| 36.76 | 2.4450 | 23.8 | (2,2,-2) |
| 42.73 | 2.1163 | 24.4 | (1,-1,-1) |
| 42.73 | 2.1163 | 24.4 | (1,-1,1) |
| 48.05 | 1.8935 | 2.3 | (2,2,-1) |
| 49.02 | 1.8584 | 2.2 | (1,-2,0) |
| 49.02 | 1.8584 | 6.6 | (2,-1,-1) |
| 49.02 | 1.8584 | 8.8 | (1,-2,1) |
| 51.47 | 1.7756 | 3.3 | (2,3,-2) |
| 51.47 | 1.7756 | 9.8 | (3,2,-3) |
| 56.19 | 1.6370 | 2.7 | (0,3,-1) |
| 56.19 | 1.6370 | 5.4 | (1,2,0) |
| 56.19 | 1.6370 | 10.9 | (0,3,-2) |
| 56.19 | 1.6370 | 2.7 | (1,2,-3) |
| 57.60 | 1.6001 | 6.6 | (1,3,-1) |
| 57.60 | 1.6001 | 6.6 | (3,1,-3) |
| 57.60 | 1.6001 | 13.3 | (1,3,-3) |
| 62.02 | 1.4965 | 16.3 | (2,-2,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of ThSi2TcIr were obtained from the Materials Project database (MP-ID: mp-3250582, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_ThSi2TcIr
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.73320156
_cell_length_b 5.73320255
_cell_length_c 5.73320156
_cell_angle_alpha 136.67594171
_cell_angle_beta 136.67595842
_cell_angle_gamma 62.93702040
_symmetry_Int_Tables_number 1
_chemical_formula_structural ThSi2TcIr
_chemical_formula_sum 'Th1 Si2 Tc1 Ir1'
_cell_volume 87.60408631
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.00000000 0.00000000 0.00000000 1.0
Si Si1 1 0.63074114 0.63074114 1.00000000 1.0
Si Si2 1 0.36925886 0.36925886 0.00000000 1.0
Tc Tc3 1 0.75000000 0.25000000 0.50000000 1.0
Ir Ir4 1 0.25000000 0.75000000 0.50000000 1.0
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