La2SiTcI
高熵材料 HEAMP-ID: mp-3250830 · 空间群: P6_3mc (#186)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 10.01 | 8.8348 | 18.0 | (0,0,0,2) |
| 23.77 | 3.7435 | 24.1 | (1,0,-1,0) |
| 24.30 | 3.6623 | 34.5 | (1,0,-1,1) |
| 25.85 | 3.4469 | 6.2 | (1,0,-1,2) |
| 25.85 | 3.4469 | 3.1 | (1,-1,0,2) |
| 28.25 | 3.1594 | 7.8 | (0,1,-1,3) |
| 28.25 | 3.1594 | 15.6 | (1,0,-1,3) |
| 30.35 | 2.9449 | 7.7 | (0,0,0,6) |
| 31.32 | 2.8559 | 100.0 | (1,0,-1,4) |
| 31.32 | 2.8559 | 50.0 | (1,-1,0,4) |
| 34.91 | 2.5698 | 13.5 | (1,0,-1,5) |
| 38.91 | 2.3146 | 8.5 | (0,1,-1,6) |
| 38.91 | 2.3146 | 16.9 | (1,0,-1,6) |
| 40.86 | 2.2087 | 13.4 | (0,0,0,8) |
| 41.79 | 2.1613 | 47.9 | (1,1,-2,0) |
| 41.79 | 2.1613 | 24.0 | (2,-1,-1,0) |
| 43.09 | 2.0994 | 1.9 | (1,1,-2,2) |
| 43.23 | 2.0929 | 4.8 | (1,0,-1,7) |
| 43.23 | 2.0929 | 2.4 | (1,-1,0,7) |
| 48.64 | 1.8718 | 2.4 | (2,0,-2,0) |
| 48.64 | 1.8718 | 1.2 | (2,-2,0,0) |
| 48.93 | 1.8614 | 1.7 | (0,2,-2,1) |
| 48.93 | 1.8614 | 1.7 | (2,0,-2,1) |
| 48.93 | 1.8614 | 1.7 | (2,-2,0,1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of La2SiTcI were obtained from the Materials Project database (MP-ID: mp-3250830, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_La2SiTcI
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.32267103
_cell_length_b 4.32267180
_cell_length_c 17.66959255
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99998645
_symmetry_Int_Tables_number 1
_chemical_formula_structural La2SiTcI
_chemical_formula_sum 'La4 Si2 Tc2 I2'
_cell_volume 285.93128399
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
La La0 1 0.00000000 0.00000000 0.10345205 1.0
La La1 1 0.00000000 0.00000000 0.60345205 1.0
La La2 1 0.00000000 0.00000000 0.89645964 1.0
La La3 1 0.00000000 0.00000000 0.39645964 1.0
Si Si4 1 0.66666700 0.33333300 0.99964091 1.0
Si Si5 1 0.33333300 0.66666700 0.49964091 1.0
Tc Tc6 1 0.33333300 0.66666700 0.00001578 1.0
Tc Tc7 1 0.66666700 0.33333300 0.50001578 1.0
I I8 1 0.66666700 0.33333300 0.25043062 1.0
I I9 1 0.33333300 0.66666700 0.75043062 1.0
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