Th2SiNiP
高熵材料 HEAMP-ID: mp-3251384 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 24.03 | 3.7039 | 26.9 | (0,0,0,4) |
| 24.92 | 3.5730 | 9.9 | (1,-1,0,0) |
| 24.92 | 3.5730 | 5.0 | (1,0,-1,0) |
| 25.65 | 3.4735 | 53.0 | (1,-1,0,1) |
| 25.65 | 3.4735 | 26.5 | (1,0,-1,1) |
| 27.72 | 3.2182 | 1.2 | (1,0,-1,2) |
| 30.89 | 2.8948 | 100.0 | (1,0,-1,3) |
| 34.89 | 2.5716 | 20.0 | (1,-1,0,4) |
| 34.89 | 2.5716 | 40.0 | (1,0,-1,4) |
| 36.38 | 2.4693 | 3.2 | (0,0,0,6) |
| 39.51 | 2.2809 | 16.9 | (1,-1,0,5) |
| 39.51 | 2.2809 | 8.5 | (1,0,-1,5) |
| 43.89 | 2.0629 | 19.0 | (1,-2,1,0) |
| 43.89 | 2.0629 | 38.0 | (2,-1,-1,0) |
| 49.20 | 1.8520 | 12.4 | (0,0,0,8) |
| 50.09 | 1.8210 | 24.9 | (1,0,-1,7) |
| 50.65 | 1.8022 | 16.1 | (2,-1,-1,4) |
| 50.65 | 1.8022 | 8.1 | (1,1,-2,4) |
| 51.13 | 1.7865 | 1.6 | (2,-2,0,0) |
| 51.53 | 1.7737 | 4.2 | (2,-2,0,1) |
| 51.53 | 1.7737 | 4.2 | (0,2,-2,1) |
| 51.53 | 1.7737 | 4.2 | (2,0,-2,1) |
| 54.63 | 1.6800 | 6.9 | (2,-2,0,3) |
| 54.63 | 1.6800 | 6.9 | (0,2,-2,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th2SiNiP were obtained from the Materials Project database (MP-ID: mp-3251384, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th2SiNiP
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.12579129
_cell_length_b 4.12579201
_cell_length_c 14.81567237
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00001020
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th2SiNiP
_chemical_formula_sum 'Th4 Si2 Ni2 P2'
_cell_volume 218.40699220
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.33333300 0.66666700 0.38200783 1.0
Th Th1 1 0.66666700 0.33333300 0.61799217 1.0
Th Th2 1 0.66666700 0.33333300 0.88200783 1.0
Th Th3 1 0.33333300 0.66666700 0.11799217 1.0
Si Si4 1 0.33333300 0.66666700 0.75000000 1.0
Si Si5 1 0.66666700 0.33333300 0.25000000 1.0
Ni Ni6 1 0.00000000 0.00000000 0.25000000 1.0
Ni Ni7 1 0.00000000 0.00000000 0.75000000 1.0
P P8 1 0.00000000 0.00000000 0.50000000 1.0
P P9 1 0.00000000 0.00000000 0.00000000 1.0
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