V8Ga4Tc3Os
高熵材料 HEAMP-ID: mp-3254519 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V8Ga4Tc3Os were obtained from the Materials Project database (MP-ID: mp-3254519, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_V8Ga4Tc3Os
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.72311775
_cell_length_b 4.79242474
_cell_length_c 9.53423083
_cell_angle_alpha 89.66409438
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural V8Ga4Tc3Os
_chemical_formula_sum 'V8 Ga4 Tc3 Os1'
_cell_volume 215.80538269
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.75027119 0.99841207 0.25137606 1.0
V V1 1 0.75134113 0.99904476 0.74978607 1.0
V V2 1 0.00000000 0.49840496 0.12518143 1.0
V V3 1 0.00000000 0.50097933 0.62465979 1.0
V V4 1 0.50000000 0.24778553 0.00010244 1.0
V V5 1 0.50000000 0.25274275 0.50027942 1.0
V V6 1 0.24972881 0.99841207 0.25137606 1.0
V V7 1 0.24865887 0.99904476 0.74978607 1.0
Ga Ga8 1 0.50000000 0.49276112 0.24736891 1.0
Ga Ga9 1 0.50000000 0.49310506 0.74825257 1.0
Ga Ga10 1 0.00000000 0.00347377 0.00300423 1.0
Ga Ga11 1 0.00000000 0.00640600 0.50278750 1.0
Tc Tc12 1 0.00000000 0.50191795 0.37368927 1.0
Tc Tc13 1 0.00000000 0.50057066 0.87373228 1.0
Tc Tc14 1 0.50000000 0.75191698 0.99892589 1.0
Os Os15 1 0.50000000 0.75502025 0.49969001 1.0
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