Ti6V4GaSi5
高熵材料 HEAMP-ID: mp-3256337 · 空间群: Amm2 (#38)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 13.94 | 6.3549 | 15.5 | (1,0,-1,0) |
| 13.94 | 6.3549 | 15.5 | (0,1,-1,0) |
| 17.96 | 4.9400 | 2.6 | (0,0,0,1) |
| 22.78 | 3.9033 | 3.4 | (1,-1,0,1) |
| 22.80 | 3.9002 | 6.2 | (1,0,-1,1) |
| 24.22 | 3.6741 | 1.2 | (2,-1,-1,0) |
| 24.28 | 3.6665 | 3.1 | (1,1,-2,0) |
| 28.02 | 3.1841 | 1.5 | (2,-2,0,0) |
| 28.08 | 3.1775 | 12.3 | (2,0,-2,0) |
| 30.32 | 2.9481 | 5.5 | (2,-1,-1,1) |
| 33.48 | 2.6763 | 1.6 | (2,-2,0,1) |
| 33.53 | 2.6724 | 1.9 | (2,0,-2,1) |
| 33.53 | 2.6724 | 1.9 | (0,2,-2,1) |
| 36.37 | 2.4700 | 24.8 | (0,0,0,2) |
| 37.37 | 2.4062 | 16.7 | (3,-2,-1,0) |
| 37.37 | 2.4062 | 16.7 | (2,-3,1,0) |
| 37.41 | 2.4041 | 9.2 | (3,-1,-2,0) |
| 37.41 | 2.4041 | 9.2 | (1,-3,2,0) |
| 37.47 | 2.4005 | 20.4 | (2,1,-3,0) |
| 39.12 | 2.3028 | 20.1 | (1,-1,0,2) |
| 39.13 | 2.3022 | 14.7 | (1,0,-1,2) |
| 41.75 | 2.1633 | 41.8 | (3,-2,-1,1) |
| 41.79 | 2.1617 | 71.4 | (3,-1,-2,1) |
| 41.84 | 2.1591 | 71.0 | (2,1,-3,1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ti6V4GaSi5 were obtained from the Materials Project database (MP-ID: mp-3256337, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ti6V4GaSi5
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.34827220
_cell_length_b 7.34827128
_cell_length_c 4.93996920
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.13827938
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ti6V4GaSi5
_chemical_formula_sum 'Ti6 V4 Ga1 Si5'
_cell_volume 230.68452292
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ti Ti0 1 0.75622429 0.75622429 0.75000000 1.0
Ti Ti1 1 0.24596196 0.99604615 0.75000000 1.0
Ti Ti2 1 0.99604615 0.24596196 0.75000000 1.0
Ti Ti3 1 0.24321397 0.24321397 0.25000000 1.0
Ti Ti4 1 0.75201797 0.00004558 0.25000000 1.0
Ti Ti5 1 0.00004558 0.75201797 0.25000000 1.0
V V6 1 0.67048420 0.33241506 0.00188297 1.0
V V7 1 0.33241506 0.67048420 0.00188297 1.0
V V8 1 0.33241506 0.67048420 0.49811703 1.0
V V9 1 0.67048420 0.33241506 0.49811703 1.0
Ga Ga10 1 0.39963158 0.39963158 0.75000000 1.0
Si Si11 1 0.60044083 0.99902969 0.75000000 1.0
Si Si12 1 0.99902969 0.60044083 0.75000000 1.0
Si Si13 1 0.59983561 0.59983561 0.25000000 1.0
Si Si14 1 0.39899837 0.00275744 0.25000000 1.0
Si Si15 1 0.00275744 0.39899837 0.25000000 1.0
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