Ti3V2Ga2Si
高熵材料 HEAMP-ID: mp-3256486 · 空间群: Amm2 (#38)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 13.77 | 6.4332 | 3.9 | (1,-1,0,0) |
| 13.78 | 6.4259 | 40.0 | (1,0,-1,0) |
| 13.78 | 6.4258 | 40.1 | (0,1,-1,0) |
| 17.72 | 5.0045 | 15.3 | (0,0,0,1) |
| 22.51 | 3.9500 | 11.5 | (1,-1,0,1) |
| 22.52 | 3.9483 | 1.6 | (1,0,-1,1) |
| 22.52 | 3.9483 | 1.6 | (0,1,-1,1) |
| 23.97 | 3.7128 | 8.8 | (2,-1,-1,0) |
| 23.97 | 3.7128 | 8.8 | (1,-2,1,0) |
| 24.00 | 3.7086 | 3.3 | (1,1,-2,0) |
| 27.77 | 3.2129 | 2.1 | (2,0,-2,0) |
| 27.77 | 3.2129 | 2.1 | (0,2,-2,0) |
| 29.97 | 2.9818 | 5.3 | (2,-1,-1,1) |
| 29.97 | 2.9818 | 5.4 | (1,-2,1,1) |
| 29.99 | 2.9796 | 15.9 | (1,1,-2,1) |
| 33.13 | 2.7037 | 7.3 | (2,0,-2,1) |
| 33.13 | 2.7037 | 7.3 | (0,2,-2,1) |
| 35.89 | 2.5022 | 78.0 | (0,0,0,2) |
| 36.98 | 2.4311 | 29.7 | (3,-2,-1,0) |
| 36.98 | 2.4311 | 29.7 | (2,-3,1,0) |
| 36.99 | 2.4299 | 13.7 | (3,-1,-2,0) |
| 36.99 | 2.4299 | 13.7 | (1,-3,2,0) |
| 37.03 | 2.4280 | 16.7 | (2,1,-3,0) |
| 37.03 | 2.4280 | 16.7 | (1,2,-3,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ti3V2Ga2Si were obtained from the Materials Project database (MP-ID: mp-3256486, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ti3V2Ga2Si
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.42557225
_cell_length_b 7.42554093
_cell_length_c 5.00447300
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.07522761
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ti3V2Ga2Si
_chemical_formula_sum 'Ti6 V4 Ga4 Si2'
_cell_volume 238.79063657
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ti Ti0 1 0.75871777 0.75872842 0.75000000 1.0
Ti Ti1 1 0.24681498 0.00060418 0.75000000 1.0
Ti Ti2 1 0.00064087 0.24683523 0.75000000 1.0
Ti Ti3 1 0.24232376 0.24235276 0.25000000 1.0
Ti Ti4 1 0.75421680 0.00401287 0.25000000 1.0
Ti Ti5 1 0.00405963 0.75423531 0.25000000 1.0
V V6 1 0.66743313 0.32912178 0.00397141 1.0
V V7 1 0.32912044 0.66743124 0.00398690 1.0
V V8 1 0.32912044 0.66743124 0.49601310 1.0
V V9 1 0.66743313 0.32912178 0.49602859 1.0
Ga Ga10 1 0.40267569 0.40270478 0.75000000 1.0
Ga Ga11 1 0.59940516 0.99744871 0.75000000 1.0
Ga Ga12 1 0.99754800 0.59946010 0.75000000 1.0
Ga Ga13 1 0.60174097 0.60177511 0.25000000 1.0
Si Si14 1 0.39786694 0.00086044 0.25000000 1.0
Si Si15 1 0.00088330 0.39787704 0.25000000 1.0
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