Ta8V2Ga6C
高熵材料 HEAMP-ID: mp-3257011 · 空间群: P-31m (#162)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 13.40 | 6.6090 | 8.4 | (1,0,-1,0) |
| 17.31 | 5.1242 | 10.0 | (0,0,0,1) |
| 21.95 | 4.0496 | 5.2 | (1,0,-1,1) |
| 26.98 | 3.3045 | 4.6 | (2,0,-2,0) |
| 26.98 | 3.3045 | 9.2 | (2,-2,0,0) |
| 29.18 | 3.0604 | 43.6 | (2,-1,-1,1) |
| 32.23 | 2.7771 | 6.5 | (2,0,-2,1) |
| 35.02 | 2.5621 | 27.0 | (0,0,0,2) |
| 35.95 | 2.4980 | 64.2 | (3,-1,-2,0) |
| 37.65 | 2.3889 | 37.0 | (1,0,-1,2) |
| 40.16 | 2.2454 | 100.0 | (3,-1,-2,1) |
| 40.16 | 2.2454 | 100.0 | (3,-2,-1,1) |
| 40.97 | 2.2030 | 34.6 | (3,0,-3,0) |
| 42.50 | 2.1271 | 80.0 | (2,-1,-1,2) |
| 44.76 | 2.0248 | 1.3 | (2,0,-2,2) |
| 44.78 | 2.0239 | 4.5 | (3,0,-3,1) |
| 49.74 | 1.8330 | 1.2 | (4,-1,-3,0) |
| 51.07 | 1.7886 | 1.0 | (2,1,-3,2) |
| 51.07 | 1.7886 | 5.0 | (3,-1,-2,2) |
| 51.08 | 1.7879 | 8.3 | (4,-2,-2,1) |
| 51.08 | 1.7879 | 4.1 | (2,-4,2,1) |
| 53.06 | 1.7259 | 1.4 | (4,-1,-3,1) |
| 53.06 | 1.7259 | 2.8 | (4,-3,-1,1) |
| 55.57 | 1.6537 | 2.5 | (1,0,-1,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ta8V2Ga6C were obtained from the Materials Project database (MP-ID: mp-3257011, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ta8V2Ga6C
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.63138414
_cell_length_b 7.63138342
_cell_length_c 5.12420399
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999466
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ta8V2Ga6C
_chemical_formula_sum 'Ta8 V2 Ga6 C1'
_cell_volume 258.44233392
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ta Ta0 1 0.66666700 0.33333300 0.00000000 1.0
Ta Ta1 1 0.33333300 0.66666700 0.00000000 1.0
Ta Ta2 1 0.00000000 0.76470104 0.23982505 1.0
Ta Ta3 1 0.23529896 0.23529896 0.23982505 1.0
Ta Ta4 1 0.76470104 0.00000000 0.23982505 1.0
Ta Ta5 1 1.00000000 0.23529896 0.76017495 1.0
Ta Ta6 1 0.76470104 0.76470104 0.76017495 1.0
Ta Ta7 1 0.23529896 1.00000000 0.76017495 1.0
V V8 1 0.33333300 0.66666700 0.50000000 1.0
V V9 1 0.66666700 0.33333300 0.50000000 1.0
Ga Ga10 1 1.00000000 0.40593344 0.26499509 1.0
Ga Ga11 1 0.59406656 0.59406656 0.26499509 1.0
Ga Ga12 1 0.40593344 1.00000000 0.26499509 1.0
Ga Ga13 1 0.00000000 0.59406656 0.73500491 1.0
Ga Ga14 1 0.40593344 0.40593344 0.73500491 1.0
Ga Ga15 1 0.59406656 0.00000000 0.73500491 1.0
C C16 1 0.00000000 0.00000000 0.50000000 1.0
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