Y10GaSn4Bi
高熵材料 HEAMP-ID: mp-3259223 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Y10GaSn4Bi were obtained from the Materials Project database (MP-ID: mp-3259223, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_Y10GaSn4Bi
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.92158797
_cell_length_b 8.92137816
_cell_length_c 6.59261211
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.03067035
_symmetry_Int_Tables_number 1
_chemical_formula_structural Y10GaSn4Bi
_chemical_formula_sum 'Y10 Ga1 Sn4 Bi1'
_cell_volume 454.28454597
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Y Y0 1 0.76097254 0.76048116 0.25000000 1.0
Y Y1 1 0.00004115 0.24019922 0.25000000 1.0
Y Y2 1 0.75789136 0.00576217 0.75000000 1.0
Y Y3 1 0.33108099 0.67542395 0.50081749 1.0
Y Y4 1 0.23902560 0.99962558 0.25000000 1.0
Y Y5 1 0.66011338 0.32150560 0.50081606 1.0
Y Y6 1 0.01598075 0.76889573 0.75000000 1.0
Y Y7 1 0.33108099 0.67542395 0.99918251 1.0
Y Y8 1 0.24034178 0.23021444 0.75000000 1.0
Y Y9 1 0.66011338 0.32150560 0.99918394 1.0
Ga Ga10 1 0.39713748 0.00047685 0.75000000 1.0
Sn Sn11 1 0.60535831 0.99789436 0.25000000 1.0
Sn Sn12 1 0.00195568 0.39480188 0.75000000 1.0
Sn Sn13 1 0.39329894 0.39606600 0.25000000 1.0
Sn Sn14 1 0.99522034 0.60286933 0.25000000 1.0
Bi Bi15 1 0.61039036 0.60885719 0.75000000 1.0
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