Nb6V4Ga6B
高熵材料 HEAMP-ID: mp-3259328 · 空间群: P-31m (#162)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 23.27 | 3.8228 | 6.1 | (2,-1,-1,0) |
| 29.18 | 3.0606 | 1.3 | (2,-1,-1,1) |
| 35.14 | 2.5540 | 21.8 | (0,0,0,2) |
| 35.88 | 2.5026 | 7.3 | (1,2,-3,0) |
| 35.88 | 2.5026 | 14.7 | (3,-1,-2,0) |
| 37.75 | 2.3829 | 7.1 | (1,0,-1,2) |
| 40.12 | 2.2474 | 100.0 | (3,-1,-2,1) |
| 40.89 | 2.2071 | 19.9 | (3,0,-3,0) |
| 42.57 | 2.1237 | 25.2 | (1,1,-2,2) |
| 42.57 | 2.1237 | 12.6 | (2,-1,-1,2) |
| 44.82 | 2.0222 | 2.6 | (2,0,-2,2) |
| 51.02 | 1.7902 | 3.0 | (2,2,-4,1) |
| 51.02 | 1.7902 | 1.5 | (4,-2,-2,1) |
| 51.10 | 1.7875 | 3.4 | (3,-1,-2,2) |
| 52.99 | 1.7281 | 9.9 | (4,-1,-3,1) |
| 54.99 | 1.6699 | 1.1 | (3,0,-3,2) |
| 55.51 | 1.6553 | 1.5 | (0,4,-4,0) |
| 55.51 | 1.6553 | 2.9 | (4,0,-4,0) |
| 60.50 | 1.5303 | 6.1 | (4,-2,-2,2) |
| 63.94 | 1.4560 | 7.7 | (5,-2,-3,1) |
| 64.49 | 1.4449 | 2.9 | (4,1,-5,0) |
| 64.49 | 1.4449 | 1.4 | (5,-1,-4,0) |
| 66.41 | 1.4078 | 14.2 | (2,1,-3,3) |
| 66.41 | 1.4078 | 7.1 | (3,-1,-2,3) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Nb6V4Ga6B were obtained from the Materials Project database (MP-ID: mp-3259328, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Nb6V4Ga6B
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.64550208
_cell_length_b 7.64550275
_cell_length_c 5.10807003
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999711
_symmetry_Int_Tables_number 1
_chemical_formula_structural Nb6V4Ga6B
_chemical_formula_sum 'Nb6 V4 Ga6 B1'
_cell_volume 258.58274793
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Nb Nb0 1 1.00000000 0.75855212 0.24141509 1.0
Nb Nb1 1 0.24144788 0.24144788 0.24141509 1.0
Nb Nb2 1 0.75855212 0.00000000 0.24141509 1.0
Nb Nb3 1 0.00000000 0.24144788 0.75858491 1.0
Nb Nb4 1 0.75855212 0.75855212 0.75858491 1.0
Nb Nb5 1 0.24144788 0.00000000 0.75858491 1.0
V V6 1 0.33333300 0.66666700 0.50000000 1.0
V V7 1 0.66666700 0.33333300 0.50000000 1.0
V V8 1 0.66666700 0.33333300 0.00000000 1.0
V V9 1 0.33333300 0.66666700 0.00000000 1.0
Ga Ga10 1 1.00000000 0.40504951 0.25461858 1.0
Ga Ga11 1 0.59495049 0.59495049 0.25461858 1.0
Ga Ga12 1 0.40504951 0.00000000 0.25461858 1.0
Ga Ga13 1 0.00000000 0.59495049 0.74538142 1.0
Ga Ga14 1 0.40504951 0.40504951 0.74538142 1.0
Ga Ga15 1 0.59495049 0.00000000 0.74538142 1.0
B B16 1 0.00000000 0.00000000 0.50000000 1.0
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