V9Si(TcGe)3
高熵材料 HEAMP-ID: mp-3261012 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V9Si(TcGe)3 were obtained from the Materials Project database (MP-ID: mp-3261012, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_V9Si(TcGe)3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.73374328
_cell_length_b 4.74997126
_cell_length_c 9.41625181
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.09100136
_symmetry_Int_Tables_number 1
_chemical_formula_structural V9Si(TcGe)3
_chemical_formula_sum 'V9 Si1 Tc3 Ge3'
_cell_volume 211.72551585
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.99783659 0.49864876 0.12208595 1.0
V V1 1 0.00223466 0.49893986 0.62683035 1.0
V V2 1 0.75365389 0.00348971 0.50000000 1.0
V V3 1 0.99783659 0.49864876 0.87791405 1.0
V V4 1 0.00223466 0.49893986 0.37316965 1.0
V V5 1 0.50000192 0.74994146 0.75341883 1.0
V V6 1 0.50000192 0.74994146 0.24658117 1.0
V V7 1 0.24927573 0.99723838 0.00000000 1.0
V V8 1 0.25021194 0.00347821 0.50000000 1.0
Si Si9 1 0.49281004 0.50200590 0.00000000 1.0
Tc Tc10 1 0.50044011 0.25273660 0.75193505 1.0
Tc Tc11 1 0.50044011 0.25273660 0.24806495 1.0
Tc Tc12 1 0.74590852 0.99792735 0.00000000 1.0
Ge Ge13 1 0.50155571 0.51049767 0.50000000 1.0
Ge Ge14 1 0.00277880 0.99241620 0.74734470 1.0
Ge Ge15 1 0.00277880 0.99241620 0.25265530 1.0
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