Y10GaSn2Bi3
高熵材料 HEAMP-ID: mp-3262225 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Y10GaSn2Bi3 were obtained from the Materials Project database (MP-ID: mp-3262225, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_Y10GaSn2Bi3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.98200411
_cell_length_b 8.99413241
_cell_length_c 6.52513543
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99704447
_symmetry_Int_Tables_number 1
_chemical_formula_structural Y10GaSn2Bi3
_chemical_formula_sum 'Y10 Ga1 Sn2 Bi3'
_cell_volume 456.52611055
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Y Y0 1 0.75977948 0.75407248 0.25000000 1.0
Y Y1 1 0.00507091 0.24574281 0.25000000 1.0
Y Y2 1 0.77023941 0.01600228 0.75000000 1.0
Y Y3 1 0.31817898 0.65222025 0.50061262 1.0
Y Y4 1 0.23861785 0.00017185 0.25000000 1.0
Y Y5 1 0.67913264 0.33889458 0.50045070 1.0
Y Y6 1 0.99947098 0.75151277 0.75000000 1.0
Y Y7 1 0.31817898 0.65222025 0.99938738 1.0
Y Y8 1 0.23120548 0.24651674 0.75000000 1.0
Y Y9 1 0.67913264 0.33889458 0.99954930 1.0
Ga Ga10 1 0.99827961 0.39460775 0.75000000 1.0
Sn Sn11 1 0.39559098 0.39023504 0.25000000 1.0
Sn Sn12 1 0.00047858 0.60861933 0.25000000 1.0
Bi Bi13 1 0.60927501 0.61305870 0.75000000 1.0
Bi Bi14 1 0.39023485 0.00201700 0.75000000 1.0
Bi Bi15 1 0.60713361 0.99521655 0.25000000 1.0
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