Y2GaRe2Os
高熵材料 HEAMP-ID: mp-3262990 · 空间群: Amm2 (#38)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Y2GaRe2Os were obtained from the Materials Project database (MP-ID: mp-3262990, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_Y2GaRe2Os
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.34996269
_cell_length_b 5.38927560
_cell_length_c 8.89025923
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.24338322
_symmetry_Int_Tables_number 1
_chemical_formula_structural Y2GaRe2Os
_chemical_formula_sum 'Y4 Ga2 Re4 Os2'
_cell_volume 221.43989529
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Y Y0 1 0.34365654 0.67182877 0.44314343 1.0
Y Y1 1 0.67170406 0.33585103 0.56434259 1.0
Y Y2 1 0.67170406 0.33585103 0.93565741 1.0
Y Y3 1 0.34365654 0.67182877 0.05685657 1.0
Ga Ga4 1 0.81012265 0.16158990 0.25000000 1.0
Ga Ga5 1 0.81012265 0.64853276 0.25000000 1.0
Re Re6 1 0.31050480 0.15525240 0.25000000 1.0
Re Re7 1 0.16890771 0.83124525 0.75000000 1.0
Re Re8 1 0.16890771 0.33766246 0.75000000 1.0
Re Re9 1 0.65428464 0.82714282 0.75000000 1.0
Os Os10 1 0.02321382 0.01160691 0.49330051 1.0
Os Os11 1 0.02321382 0.01160691 0.00669949 1.0
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