V8Ga4Tc3Mo
高熵材料 HEAMP-ID: mp-3264534 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V8Ga4Tc3Mo were obtained from the Materials Project database (MP-ID: mp-3264534, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_V8Ga4Tc3Mo
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.76386314
_cell_length_b 4.77700841
_cell_length_c 9.58904159
_cell_angle_alpha 90.17525113
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural V8Ga4Tc3Mo
_chemical_formula_sum 'V8 Ga4 Tc3 Mo1'
_cell_volume 218.21693596
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.74973691 0.99850365 0.25043297 1.0
V V1 1 0.74931277 0.99600605 0.75255294 1.0
V V2 1 0.00000000 0.50643172 0.12518724 1.0
V V3 1 0.00000000 0.50440674 0.62845064 1.0
V V4 1 0.50000000 0.24801673 0.99838021 1.0
V V5 1 0.50000000 0.24513864 0.49669844 1.0
V V6 1 0.25026309 0.99850365 0.25043297 1.0
V V7 1 0.25068723 0.99600605 0.75255294 1.0
Ga Ga8 1 0.50000000 0.49409236 0.24576903 1.0
Ga Ga9 1 0.50000000 0.49208612 0.74853879 1.0
Ga Ga10 1 0.00000000 0.00617258 0.00346639 1.0
Ga Ga11 1 0.00000000 0.00731878 0.50359981 1.0
Tc Tc12 1 0.00000000 0.50024624 0.37155628 1.0
Tc Tc13 1 0.00000000 0.50096874 0.87363701 1.0
Tc Tc14 1 0.50000000 0.75526056 0.99939491 1.0
Mo Mo15 1 0.50000000 0.75083941 0.49934745 1.0
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