V7Ga3SiTc5
高熵材料 HEAMP-ID: mp-3265238 · 空间群: P1 (#1)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V7Ga3SiTc5 were obtained from the Materials Project database (MP-ID: mp-3265238, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_V7Ga3SiTc5
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.73577546
_cell_length_b 4.75880748
_cell_length_c 9.50428457
_cell_angle_alpha 89.80329883
_cell_angle_beta 89.90304974
_cell_angle_gamma 89.89976312
_symmetry_Int_Tables_number 1
_chemical_formula_structural V7Ga3SiTc5
_chemical_formula_sum 'V7 Ga3 Si1 Tc5'
_cell_volume 214.19278038
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.75279880 0.49934093 0.49977137 1.0
V V1 1 0.50240247 0.99983924 0.12473348 1.0
V V2 1 0.49755563 0.99984711 0.62488925 1.0
V V3 1 0.25047787 0.49963951 0.00008265 1.0
V V4 1 0.24490085 0.49949089 0.49984987 1.0
V V5 1 0.00039618 0.24991527 0.25301503 1.0
V V6 1 0.99959381 0.24909956 0.74605616 1.0
Ga Ga7 1 0.49851857 0.49641403 0.24992313 1.0
Ga Ga8 1 0.49809060 0.49601008 0.74577331 1.0
Ga Ga9 1 0.00404862 0.00254100 0.00168515 1.0
Si Si10 1 0.99922041 0.00645876 0.50139556 1.0
Tc Tc11 1 0.49906525 0.99952721 0.37801401 1.0
Tc Tc12 1 0.50070654 0.99954732 0.87573417 1.0
Tc Tc13 1 0.75283503 0.50002082 0.99996996 1.0
Tc Tc14 1 0.00049883 0.75140504 0.25430010 1.0
Tc Tc15 1 0.99889056 0.75090522 0.74480578 1.0
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