Ti4SiC2O
高熵材料 HEAMP-ID: mp-3265567 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 7.71 | 11.4701 | 17.6 | (0,0,0,2) |
| 15.45 | 5.7351 | 6.8 | (0,0,0,4) |
| 31.19 | 2.8675 | 5.0 | (0,0,0,8) |
| 34.17 | 2.6241 | 3.7 | (1,0,-1,0) |
| 34.17 | 2.6241 | 1.9 | (1,-1,0,0) |
| 34.40 | 2.6071 | 8.8 | (1,0,-1,1) |
| 34.40 | 2.6071 | 4.4 | (1,-1,0,1) |
| 35.08 | 2.5580 | 10.2 | (1,0,-1,2) |
| 35.08 | 2.5580 | 5.1 | (1,-1,0,2) |
| 36.19 | 2.4821 | 6.8 | (1,0,-1,3) |
| 37.70 | 2.3862 | 13.4 | (1,0,-1,4) |
| 39.27 | 2.2940 | 16.9 | (0,0,0,10) |
| 39.56 | 2.2779 | 36.9 | (1,0,-1,5) |
| 39.56 | 2.2779 | 18.4 | (1,-1,0,5) |
| 41.75 | 2.1636 | 100.0 | (1,0,-1,6) |
| 44.22 | 2.0484 | 2.4 | (1,0,-1,7) |
| 44.22 | 2.0484 | 1.2 | (1,-1,0,7) |
| 47.57 | 1.9117 | 4.7 | (0,0,0,12) |
| 56.35 | 1.6327 | 17.7 | (1,0,-1,11) |
| 59.86 | 1.5452 | 12.4 | (1,0,-1,12) |
| 61.17 | 1.5150 | 12.0 | (1,1,-2,0) |
| 61.17 | 1.5150 | 12.0 | (1,-2,1,0) |
| 61.17 | 1.5150 | 12.0 | (2,-1,-1,0) |
| 63.53 | 1.4643 | 3.8 | (1,0,-1,13) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ti4SiC2O were obtained from the Materials Project database (MP-ID: mp-3265567, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ti4SiC2O
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 3.03008843
_cell_length_b 3.03008857
_cell_length_c 22.94024391
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99998760
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ti4SiC2O
_chemical_formula_sum 'Ti8 Si2 C4 O2'
_cell_volume 182.40609389
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ti Ti0 1 0.00000000 0.00000000 0.33861756 1.0
Ti Ti1 1 0.00000000 0.00000000 0.66138244 1.0
Ti Ti2 1 0.00000000 0.00000000 0.83861756 1.0
Ti Ti3 1 0.00000000 0.00000000 0.16138244 1.0
Ti Ti4 1 0.33333300 0.66666700 0.44040734 1.0
Ti Ti5 1 0.66666700 0.33333300 0.55959266 1.0
Ti Ti6 1 0.66666700 0.33333300 0.94040734 1.0
Ti Ti7 1 0.33333300 0.66666700 0.05959266 1.0
Si Si8 1 0.33333300 0.66666700 0.25000000 1.0
Si Si9 1 0.66666700 0.33333300 0.75000000 1.0
C C10 1 0.66666700 0.33333300 0.39033767 1.0
C C11 1 0.33333300 0.66666700 0.60966233 1.0
C C12 1 0.33333300 0.66666700 0.89033767 1.0
C C13 1 0.66666700 0.33333300 0.10966233 1.0
O O14 1 0.00000000 0.00000000 0.50000000 1.0
O O15 1 0.00000000 0.00000000 0.00000000 1.0
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