V10GaSi3Rh2
高熵材料 HEAMP-ID: mp-3266753 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V10GaSi3Rh2 were obtained from the Materials Project database (MP-ID: mp-3266753, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_V10GaSi3Rh2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.66255619
_cell_length_b 4.70782990
_cell_length_c 9.41888676
_cell_angle_alpha 90.17039445
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural V10GaSi3Rh2
_chemical_formula_sum 'V10 Ga1 Si3 Rh2'
_cell_volume 206.74856142
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.00000000 0.50032267 0.62605053 1.0
V V1 1 0.50000000 0.24556856 0.25433303 1.0
V V2 1 0.75126088 0.99560234 0.99928245 1.0
V V3 1 0.75370132 0.99910437 0.49891647 1.0
V V4 1 0.00000000 0.50573433 0.86546217 1.0
V V5 1 0.00000000 0.50386190 0.38482770 1.0
V V6 1 0.50000000 0.74570633 0.74741862 1.0
V V7 1 0.50000000 0.75911679 0.25331653 1.0
V V8 1 0.24873912 0.99560234 0.99928245 1.0
V V9 1 0.24629868 0.99910437 0.49891647 1.0
Ga Ga10 1 0.50000000 0.49885986 0.99946569 1.0
Si Si11 1 0.50000000 0.50600082 0.49578096 1.0
Si Si12 1 0.00000000 0.99517073 0.74997058 1.0
Si Si13 1 0.00000000 0.00237644 0.25380446 1.0
Rh Rh14 1 0.00000000 0.50250992 0.12737730 1.0
Rh Rh15 1 0.50000000 0.24535922 0.74579460 1.0
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