V9Ga4Tc2Os
高熵材料 HEAMP-ID: mp-3269544 · 空间群: Pm (#6)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of V9Ga4Tc2Os were obtained from the Materials Project database (MP-ID: mp-3269544, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_V9Ga4Tc2Os
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.73039599
_cell_length_b 4.73947186
_cell_length_c 9.60492619
_cell_angle_alpha 89.92384017
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural V9Ga4Tc2Os
_chemical_formula_sum 'V9 Ga4 Tc2 Os1'
_cell_volume 215.33820781
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
V V0 1 0.50000000 0.75137432 0.49666545 1.0
V V1 1 0.74849905 0.99965611 0.25301009 1.0
V V2 1 0.75022282 0.99906767 0.75060146 1.0
V V3 1 0.00000000 0.50488600 0.12165570 1.0
V V4 1 0.00000000 0.49678872 0.62979854 1.0
V V5 1 0.50000000 0.25015334 0.99931794 1.0
V V6 1 0.50000000 0.24499280 0.49736394 1.0
V V7 1 0.25150095 0.99965611 0.25301009 1.0
V V8 1 0.24977718 0.99906767 0.75060146 1.0
Ga Ga9 1 0.50000000 0.49701751 0.24729600 1.0
Ga Ga10 1 0.50000000 0.49719232 0.74519480 1.0
Ga Ga11 1 0.00000000 0.00635297 0.00399862 1.0
Ga Ga12 1 0.00000000 0.99845042 0.50432296 1.0
Tc Tc13 1 0.00000000 0.50233416 0.87431563 1.0
Tc Tc14 1 0.50000000 0.75401646 0.99953911 1.0
Os Os15 1 0.00000000 0.49899040 0.37330720 1.0
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